The end to end resistance of a connecting bar 10um long, 3 um wide, 1um think, made of various materials. The designer considers:Intrinsic silicon at room temperature. Assume that n_i = n = p = 1.5 * 10 ^10 cm^-3N-doped silicon with N_D = 5*10^16 per cm^3N-doped silicon with N_D = 5*10 ^18 per cm^3P-doped silicon with N_A = 5*10^16 per cm^3Aluminum with resistivity (p) of 2.8 u Ohms * cmFind the resistance, R, in each case. For intrinsic silicon, u_n = 1350 Cm^2 / V*s and u_p = 480 cm^2 / V*s. For doped silicon, assume u_n = 3u_p = 1200 cm^2 /V*s 21SiliconR =VHiltV-d:lWArea1σ-1dwt(drid + "ru)b =ρ

Answered: 2 1 Silicon R = V Hilt V -d: l W Area 1…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Question

100%

The end to end resistance of a connecting bar 10um long, 3 um wide, 1um think, made of various materials. The designer considers:

Intrinsic silicon at room temperature. Assume that n_i = n = p = 1.5 * 10 ^10 cm^-3
N-doped silicon with N_D = 5*10^16 per cm^3
N-doped silicon with N_D = 5*10 ^18 per cm^3
P-doped silicon with N_A = 5*10^16 per cm^3
Aluminum with resistivity (p) of 2.8 u Ohms * cm

Find the resistance, R, in each case. For intrinsic silicon, u_n = 1350 Cm^2 / V*s and u_p = 480 cm^2 / V*s. For doped silicon, assume u_n = 3u_p = 1200 cm^2 /V*s