3:- Calculate the electron and hole concentration under steady-state illumination in n-type silicon with Gz = 10¹6 cm ³s¹, ND = 10¹5 cm³, and t = tp = 10 μs.

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03:- Calculate the electron and hole concentration under steady-state illumination in
an n-type silicon with Gr= 10¹6 cm³s¹, ND = 10¹5 cm³, and t = tp = 10 us.
Transcribed Image Text:03:- Calculate the electron and hole concentration under steady-state illumination in an n-type silicon with Gr= 10¹6 cm³s¹, ND = 10¹5 cm³, and t = tp = 10 us.
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