4. An alien named Iofi sneezes onto the wafer, doping it uniformly with an additional NA = 10°/cm³.(a) What is now the majority carrier of the wafer?(b) How many carrier electrons are there in the wafer in total?(c) How many carrier holes are there in the wafer in total?(d) Is the carrier now n-type or p-type? Silicon Wafer5cm1cmYou are given a 1mm × 1cm × 5cm silicon wafer, shown above. The room is at 300K, and you may assumetotal ionization.

Given a silicon wafer : The silicon wafer is uniformly doped with additional NA=103 / cm3. a) We…

Answered: 4. An alien named Iofi sneezes onto the…

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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What is CEMF?
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
A thermal oxide of thickness 100 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1150 C, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of .5um. Calculate the time taken to obtain the additional thickness.
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
Figure Q4 shows the silicon wafer. This silicon has been added with the two elements as listed in Table Q3. Identify the majority charge carrier in each extrinsic silicon wafer and justify your answer with illustrations.
Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? H, = 2505 nį = 1.5 x 1010cm-3 cm-2 and V.S (Ans. 2.25 x 103 cm-3, 0.252.cm).
Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junction
1 (b) When Ef touches intrinsic Fermi energy Eri, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case?
In the circuit a current of no more tha 20 mA may flow for a maximum instataneous voltage of 20 v.In the conducting state direction the voltage drop across each diode is at least 1.5 v. How large must the protective resistor be?calculate using ohms law.

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