4.3 Fixed-Bias Configuration 1. For the fixed-bias configuration of Fig. 4.118, determine: a. IB Q b. lcg VCEO' C. d. Vc. e. VB. f. VE. c. RB. d. VCE. 16 V 510 ΚΩ IBQ VB Ico 1.8 ΚΩ Vc VCEQ B=120 VE FIG. 4.118 Problems 1, 4, 6, 7, 14, 65, 69, 71, and 75. 2. Given the information appearing in Fig. 4.119, determine: a. Ic. b. Rc.

4.3 Fixed-Bias Configuration 1. For the fixed-bias configuration of Fig. 4.118, determine: a. IB Q b. lcg VCEO' C. d. Vc. e. VB. f. VE. c. RB. d. VCE. 16 V 510 ΚΩ IBQ VB Ico 1.8 ΚΩ Vc VCEQ B=120 VE FIG. 4.118 Problems 1, 4, 6, 7, 14, 65, 69, 71, and 75. 2. Given the information appearing in Fig. 4.119, determine: a. Ic. b. Rc.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Q.108- using kel to Find The Valueof Vi 3.1A ans 8 [ e4.8]
Q4: Find VAF , VFB and VBD 12 V E AO OB OF 24 V 4 V C 8 V D
Section 4 * ?Q) How frequency related to time period Inversely proportional. O Not related O Square proportional. O Directly proportional. O -------- Q) The scale of series ohmmeter is a) Linear. C c) (a) or (b). O d) Not all above. O b) Nonlinear. O Q) Rs in the DC Wheatstone Bridge, null type is adjusted to 20Q at balance. *„Find Rx, when Ra = 100, Rb = 2.50 Jel 4 5Ω. Ο 1.250. O 1.50. O 3.50. o o 0
2. Using data sheet of 2N 3904, IC max =200 mA, Calculate RB and RC for Transistor Circuit of maximum IC for VCC = 12V and VBB = 4 V, Show all your work VBB +_ I RB R₁ www Q₁ 2N3904 + Vcc I
27. For the collector-feedback configuration of Fig. 4.129, determine: a. Ig. b. Ic. c. Vc. +16 V 3.6 k2 270 k2 Vc Ic IB B = 120 1.2 k2 FIG. 4.129 Problems 27, 28, 74, and 78.
question from book ELECTRONIC CIRCUIT DESIGN : Question No.3 A designer designs the circuit given in figure 3. You have to analyse it to find thefollowing parameters: a.VB ,VE, IE , IB, VS , VCE, VDS. Replace the JFET with D-typeMOSFET and find b.Vc ,VG ,VDS ,VCE c. Is there any difference between the parameters found forJFET.
Q4. A device has the in Figa) below. Ipss = KV² ip (mA) 15 Triode 10 region 5 Constant-current region 10 v-i characteristic shown 15 20 Ups (V) UDS VT = 15 V + RTh= 1 ks2 ww D ip + UDS S (b) VA VDS Find is and vos, for this circuit, using the graphical and algebraic technique. Solution
Question no. 5 out of 20 Answer this question For the emitter-bias circuit of Fig. 4.17, determine the voltage VCE given that Vcc = 20 V, RB = 460 k2, Rc = 2 k2, RE = 1 k2, and 8 = 70. %3D Select the correct answer A 8.6316 V B 4.9324 V C 12.3309 V D 30.8272 V E 9.8647 V FIC. 4.17 RIT hsiuil with eer esis
For the emitter-stabilized bias circuit of Fig. 4.123, determine a. b. 44 Emitter-Bias Configuration 8. c. VCEQ e. VB 20 V 470 92 Ic 270 kS2 VB VcEo 2.2 kS2 FIG. 4.123 Problems 8, 9, 12, 14,68, 71, 74, and 78
Two diodes are connected in series as shown in Fig. Q4(d) and share a total (d) dc reverse voltage Vo = 7 kV. The reverse leakage currents of the two diodes are Isı = 25mA and Is2 = 37mA. Find the diode voltages if the voltage-sharing resistors are equal and R; = R2 = R= 100 KO in R Iga Fig. Q4(d) Two diodes connected in series
29. For the voltage feedback network of Fig. 4.130, determine: a. Ic. b. Vc- c. VE. d. VCE- 244 DC BIASING-BJTS 30 V 8.2 k2 330 kQ 220 k2 Vc 10uF 5 µF 10 μF VCE B=180 C9 1.8 k2 35 μF FIG. 4.130 Problems 29 and 30.
B + Vin + Avin + Re Evr The Cir Cuit Shown has the following values R₁ =2000 2₂₁ = 4k₁₂², K3= 150v2 and Ry = 1 kur. The gain of the dependent Source A = 30 and Vsig = somu. Determine the vale of Vin In mu Vahe oF UL in V Determine the