5(B) Assuming a stiff voltage divider for the circuit shown below, determine i) The Emitter voltage, Ve ii) the Emitter current, lE 15V Re 20K2 1.8 Ksh 200 D C RE 1•2 Ke
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- What is CEMF?(a) Refer to the circuit in figure 1 below: R = 5 k2 Ip Vp: = 10 V Figure 1 i. Determine and draw the load line for the circuit. ii. Calculate VD, given Ip, is 3.5mA. iii. Determine the power dissipated in the diode. (c) Let say a new AC source v is added to the circuit in Figure 1, as shown in Figure 2 below. Given vi = 0.5sinot V, determine the total voltage vz across the resistor R. | R = 5 k2 Vp: = 10 V ♡ VD Figure 2Analyze the circuit using KVL or superposition, Analyze the circuit assuming many source values that lead to all possible cases of diode states, re-plot the circuit and develop the relation between the output voltage and the source.
- Procedure 1. Use multisim simulation package to simulate the circuit shown in the figure 5. Consider the following. Transistor type 2N2222A (NPN) and 2N3702 (PNP), Diode type (1N4007G). +20 V R 470 D Vut D2 RL 16 N V, R2 470 2 -20 V Figure 5.Class AB simulation circuit diagram. 3. Discuss the efficiency compared to class A power amplifier. i. he avan i4. (2,5) For the circuit in Figure 01: (a) Determine VOUT at IZK and at Izm. (b) Calculate the value ofR that should be used. (c) Determine the minimum value of RL that can be used. Obs. The IN4744A zener used in the regulator circuit of Figure 01 is a 15 V diode The datasheet gives the following information: Vz = 15 V @ Iz = 17 mA, IzK = 0.25 mA, and Zz = 14 Q. (resistência de corpo). R VOUT + VIN IN4744A RL 24 VFAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…
- Find Vs in Volts Find the voltage Vs in V. I s =2.94 mA R 1 = 1.51 KΩ VZ = 25 Volts Note: Consider in your calculation the voltage of diodes if needed. Note: Take into account when calculating the voltage of the diodes, if necessary.1. Pinch-off voltage Vp for an FET is the drain voltage at which: a. Drain current becomes zero b. All free charges get removed from the channel c. Significant drain current starts flowing d. Avalanche breakdown takes placeFor the voltage-divider bias network of Figure 1: a. Determine re. b. Calculate Zi and Zo. c. Find Av. d. Repeat parts (b) and (c) with ro = 25 k.
- Q#2 (a)For Zener diode network determine the VL ,VR ,IZ, and Pzshow in figure #110U, 8,2 le -50 12 kVL A D2 and D, are ideal diodes. which oiode s the creuit) areCalculate the diode current, lo, for the circuit shown. The source has Va 1.5 V and R = 0.8 92 and each of the diodes has Is = 10" A. // 21-15001 = 1.5 Vth R+h0.8 22 ↓ID ve