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8. In a certain FET circuit, VGs = 0 V, VDD = 15 V, Ipss = 15 mA, and Rp = 470 N. If Rp is decreased to 330 , Ipss is (a) 19.5 mA (b) 10.5 mA (c) 15 mA (d) 1 mA 9. At cutoff, the JFET channel is

8. In a certain FET circuit, VGs = 0 V, VDD = 15 V, Ipss = 15 mA, and Rp = 470 N. If Rp is decreased to 330 , Ipss is (a) 19.5 mA (b) 10.5 mA (c) 15 mA (d) 1 mA 9. At cutoff, the JFET channel is

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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8. In a certain FET circuit, VGs = 0 V, VDD 15 V, Ipss 15 mA, and Rp = 470 2. If Rp is decreased to 330 2, Ipss is (a) 19.5 mA (b) 10.5 mA (c) 15 mA (d) 1 mA 9. At cutoff, the JFET channel is (a) at its widest point (b) completely closed by the depletion region (c) extremely narrow (d) reverse-biased 10. A certain JFET datasheet gives VGS(off) = -4 V. The pinch-off voltage, Vp, (a) cannot be determined (b) is -4 V (c) depends on VGS (d) is +4 V 11. The JFET in Question 10 (a) is an n channel (b) is a p channel (c) can be either 12. For a certain JFET, IGSS = 10 nA at VGs = 10 V. The input resistance is (a) 100 M2 (b) 1 МO (c) 1000 MQ (d) 1000 MQ -3 13. For a certain p-channel JFET, VGS(of) 8 V. The value of Ves for an approximate midpoint bias is (a) 4 V (b) 0 V (c) 1.25 V (d) 2.34 V 14. In a self-biased JFET, the gate is at (a) a positive voltage (b) 0 V (c) a negative voltage (d) ground -4 15. The drain-to-source resistance in the ohmic region depends on (a) VGS (b) the Q-point values (c) the slope of the curve at the Q-point (d) all of these 16. To be used as a variable resistor, a JFET must be (a) an n-channel device (b) ap-channel device (c) biased in the ohmic region (d) biased in saturation 17. When a JFET is biased at the origin, the ac channel resistance is determined by (a) the Q-point values (b) VGS (c) the transconductance (d) answers (b) and (c)
Transcribed Image Text:8. In a certain FET circuit, VGs = 0 V, VDD 15 V, Ipss 15 mA, and Rp = 470 2. If Rp is decreased to 330 2, Ipss is (a) 19.5 mA (b) 10.5 mA (c) 15 mA (d) 1 mA 9. At cutoff, the JFET channel is (a) at its widest point (b) completely closed by the depletion region (c) extremely narrow (d) reverse-biased 10. A certain JFET datasheet gives VGS(off) = -4 V. The pinch-off voltage, Vp, (a) cannot be determined (b) is -4 V (c) depends on VGS (d) is +4 V 11. The JFET in Question 10 (a) is an n channel (b) is a p channel (c) can be either 12. For a certain JFET, IGSS = 10 nA at VGs = 10 V. The input resistance is (a) 100 M2 (b) 1 МO (c) 1000 MQ (d) 1000 MQ -3 13. For a certain p-channel JFET, VGS(of) 8 V. The value of Ves for an approximate midpoint bias is (a) 4 V (b) 0 V (c) 1.25 V (d) 2.34 V 14. In a self-biased JFET, the gate is at (a) a positive voltage (b) 0 V (c) a negative voltage (d) ground -4 15. The drain-to-source resistance in the ohmic region depends on (a) VGS (b) the Q-point values (c) the slope of the curve at the Q-point (d) all of these 16. To be used as a variable resistor, a JFET must be (a) an n-channel device (b) ap-channel device (c) biased in the ohmic region (d) biased in saturation 17. When a JFET is biased at the origin, the ac channel resistance is determined by (a) the Q-point values (b) VGS (c) the transconductance (d) answers (b) and (c)
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