A Czochralski Si crystal was pulled from the Si melt containing 10¹5 cm³ boron (B) and 5x10¹4 cm²³ phosporous (P). Assume that the length of the grown Si ingot is 1 m if the melt is fully consumed and that the segregation coefficient, k, is 0.8 for B and 0.35 for P, respectively. C₁=k₂C (1-X)k-1 (a) What are the dopant concentrations (B and P) of the solidified Si at the solid/liquid interface when 10% of the melt is solidified. Is the grown solid Si p-type or n-type? Why? (b) What are the dopant concentrations (B and P) of the solidified Si at the solid/liquid interface when 99% of the melt is solidified. Is the grown solid Si p-type or n-type? Why? (c) Calculate the distance along the pulled crystal at which the transition of doping type takes place.

A Czochralski Si crystal was pulled from the Si melt containing 10¹5 cm³ boron (B) and 5x10¹4 cm²³ phosporous (P). Assume that the length of the grown Si ingot is 1 m if the melt is fully consumed and that the segregation coefficient, k, is 0.8 for B and 0.35 for P, respectively. C₁=k₂C (1-X)k-1 (a) What are the dopant concentrations (B and P) of the solidified Si at the solid/liquid interface when 10% of the melt is solidified. Is the grown solid Si p-type or n-type? Why? (b) What are the dopant concentrations (B and P) of the solidified Si at the solid/liquid interface when 99% of the melt is solidified. Is the grown solid Si p-type or n-type? Why? (c) Calculate the distance along the pulled crystal at which the transition of doping type takes place.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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