a) Given the choice between a MOSFE1Open with for a high voltage application. State your selection with reasons. b) The parameters for the power MOSFET in the circuit shown in the Figure 1 are as follows: rise time, t, = 2 us; on resistance, Ros(on) = 0.202; duty cycle, D = 0.7; and switching frequency, f = 30 kHz. Determine: i. the power-loss in the on state. ii. the power-loss during the turn-on interval. Vos 100 V In D R₁ 120 Figure 1 c) Draw a clearly labeled diagram of the thermal equivalent circuit of a transistor. d) The maximum junction temperature of a power transistor is T; = 150 °C and the ambient temperature is TA = 25 °C. If the thermal impedances are Rjc == 0.4 C/W, Rcs = 0.1 °C/W, and RSA = 0.5 °C/W. Calculate, i. the maximum power dissipation. ii. the case temperature.

a) Given the choice between a MOSFE1Open with for a high voltage application. State your selection with reasons. b) The parameters for the power MOSFET in the circuit shown in the Figure 1 are as follows: rise time, t, = 2 us; on resistance, Ros(on) = 0.202; duty cycle, D = 0.7; and switching frequency, f = 30 kHz. Determine: i. the power-loss in the on state. ii. the power-loss during the turn-on interval. Vos 100 V In D R₁ 120 Figure 1 c) Draw a clearly labeled diagram of the thermal equivalent circuit of a transistor. d) The maximum junction temperature of a power transistor is T; = 150 °C and the ambient temperature is TA = 25 °C. If the thermal impedances are Rjc == 0.4 C/W, Rcs = 0.1 °C/W, and RSA = 0.5 °C/W. Calculate, i. the maximum power dissipation. ii. the case temperature.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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