A silicon sample is doped with Nd = 10¹7 cm³ of As atoms. (a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or Ev) at 300 K? (Assume full ionization of impurities.) (b) Repeat (a) for Nd = 10¹⁹ cm-³. (c) Repeat (a) for Nd = 10¹7cm-³ but T = 30K. (This situation is called dopant freeze-out.) (d) Interpret the results obtained above in relation intrinsic values.

A silicon sample is doped with Nd = 10¹7 cm³ of As atoms. (a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or Ev) at 300 K? (Assume full ionization of impurities.) (b) Repeat (a) for Nd = 10¹⁹ cm-³. (c) Repeat (a) for Nd = 10¹7cm-³ but T = 30K. (This situation is called dopant freeze-out.) (d) Interpret the results obtained above in relation intrinsic values.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter10: Statistical Physics

Section: Chapter Questions

Problem 26P

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