Gallium Nitride is a binary III/V semiconductor commonly used in the production of violet colored LEDs. The compound has a Wurtzite crystal structure. If the temperature of the crystal is 300 K and it has a volume of 1 cm3. a. What is the value of Egap (in eV)?b. Is the material a direct or indirectband-gap semiconductor?c. What is the value of Ec (in eV)? 10ev GaNΦ8(62ωο-2του β-61,31.32,43--55,61.35.61,3-8A R LU M Σ ΓΔΑk1,21,23S Η Ρ Κ-Γ

Answered: a. What is the value of Egap (in eV)?…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

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Gallium Nitride is a binary III/V semiconductor commonly used in the production of violet colored LEDs. The compound has a Wurtzite crystal structure. If the temperature of the crystal is 300 K and it has a volume of 1 cm3.

a. What is the value of Egap (in eV)?
b. Is the material a direct or indirect
band-gap semiconductor?
c. What is the value of Ec (in eV)?

10
ev GaN
Φ
8
(
6
2
ωο
-2
του β
-6
1,3
1.3
2,4
3
--
5
5,6
1.3
5.6
1,3
-8
A R LU M Σ ΓΔΑ
k
1,2
1,2
3
S Η Ρ Κ
-
Γ

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