An abrupt Si p-n junction as cross sectional area of 10-4 cm?, a total length of 40 um with the boundary between the p and n regions exactly half way through the length. The doping levels are Na = 1015cm-3 with minority carrier recombination time T, = 10 us on the p side and Na = 10"cm-3 and Tp = 0.1 µs on the n side. a) Using the mobilities on the equation sheet, calculate the reverse saturation current. b) Calculate the built-in potential. c) Calculate the depletion zone width at a reverse bias of 2 V. d) Calculate the junction capacitance at a reverse bias of 2 V. e) Calculate the peak electric field at the junction at a reverse bias of 2 V. f) Calculate the depletion zone width at a forward bias of 0.7 V. g) Calculate the peak electric field at the junction at a forward bias of 0.7 V. h) Using the ideal diode equation calculate the current and current density (J) at a forward bias of 0.7 V. i) Calculate the conductivity of the p and n regions far from the junction. Use the mobilities given on the equation sheet. j) Calculate the electric field far from the junction embedded in the p and n regions at a forward bias voltage of 0.7 V. Hint: use Ohm's law E = Jlo. k) Using the results of part (i), calculate the equivalent ohmic series resistance of the each of the undepleted p and n regions of the diode and the total." In which region does the ohmic loss dominate? I) Using the results of part (k), calculate the ohmic voltage drop across the undepleted p and n regions and compare this to the bias voltage." m) Draw the equivalent circuit of the diode in forward bias with the resistances calculated in part (k). n) Sketch the electron energy band diagram of the junction region under the forward bias of 0.7 V. o) Sketch the electron energy band diagram of the junction region under the reverse bias of 2 V.

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An abrupt Si p-n junction as cross sectional area of 10-4 cm?, a total length of 40 um
with the boundary between the p and n regions exactly half way through the length. The doping levels
are Na = 1015cm-3 with minority carrier recombination time T, = 10 us on the p side and
Na = 10"cm-3 and Tp = 0.1 µs on the n side. a) Using the mobilities on the equation sheet, calculate
the reverse saturation current. b) Calculate the built-in potential. c) Calculate the depletion zone width
at a reverse bias of 2 V. d) Calculate the junction capacitance at a reverse bias of 2 V. e) Calculate
the peak electric field at the junction at a reverse bias of 2 V. f) Calculate the depletion zone width at
a forward bias of 0.7 V. g) Calculate the peak electric field at the junction at a forward bias of 0.7 V.
h) Using the ideal diode equation calculate the current and current density (J) at a forward bias of 0.7
V. i) Calculate the conductivity of the p and n regions far from the junction. Use the mobilities given
on the equation sheet. j) Calculate the electric field far from the junction embedded in the p and n
regions at a forward bias voltage of 0.7 V. Hint: use Ohm's law E = Jlo. k) Using the results of part
(i), calculate the equivalent ohmic series resistance of the each of the undepleted p and n regions of
the diode and the total." In which region does the ohmic loss dominate? I) Using the results of part
(k), calculate the ohmic voltage drop across the undepleted p and n regions and compare this to the
bias voltage." m) Draw the equivalent circuit of the diode in forward bias with the resistances
calculated in part (k). n) Sketch the electron energy band diagram of the junction region under the
forward bias of 0.7 V. o) Sketch the electron energy band diagram of the junction region under the
reverse bias of 2 V.
Transcribed Image Text:An abrupt Si p-n junction as cross sectional area of 10-4 cm?, a total length of 40 um with the boundary between the p and n regions exactly half way through the length. The doping levels are Na = 1015cm-3 with minority carrier recombination time T, = 10 us on the p side and Na = 10"cm-3 and Tp = 0.1 µs on the n side. a) Using the mobilities on the equation sheet, calculate the reverse saturation current. b) Calculate the built-in potential. c) Calculate the depletion zone width at a reverse bias of 2 V. d) Calculate the junction capacitance at a reverse bias of 2 V. e) Calculate the peak electric field at the junction at a reverse bias of 2 V. f) Calculate the depletion zone width at a forward bias of 0.7 V. g) Calculate the peak electric field at the junction at a forward bias of 0.7 V. h) Using the ideal diode equation calculate the current and current density (J) at a forward bias of 0.7 V. i) Calculate the conductivity of the p and n regions far from the junction. Use the mobilities given on the equation sheet. j) Calculate the electric field far from the junction embedded in the p and n regions at a forward bias voltage of 0.7 V. Hint: use Ohm's law E = Jlo. k) Using the results of part (i), calculate the equivalent ohmic series resistance of the each of the undepleted p and n regions of the diode and the total." In which region does the ohmic loss dominate? I) Using the results of part (k), calculate the ohmic voltage drop across the undepleted p and n regions and compare this to the bias voltage." m) Draw the equivalent circuit of the diode in forward bias with the resistances calculated in part (k). n) Sketch the electron energy band diagram of the junction region under the forward bias of 0.7 V. o) Sketch the electron energy band diagram of the junction region under the reverse bias of 2 V.
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