An NPN transistor is used in common emitter configuration as an amplifier with 1 kQ load resistance. Signal voltage of 10 mV is applied across the base-emitter. This produces a 3 mA change in the collector current and 15 µA change in the base current of the amplifier. The input resistance and voltage gain are: 1. 0.33 kn, 1.5 2. 0.67 kn, 300 3. 0.67 k0, 200 4. 0.33 kn, 300
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- An apa transistor is accidentally connected with col-lector and emitter leads interchanged. The resulting currents in the normal emitter and base leads are 0.5 mA and I mA, respectively. What are the values of as and fa?In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150For the MOSFET amplifier Shown in figure below, the transistor parameters are VTN=0.8 V. Kn = 1 mA/V², and λ = 0. The circuit parameters are Vpp = 5 V. Rs = 1 KQ. Rp=4 KQ, R₁ = 225 KQ, and R₂ = 175 ko. Calculate the quiescent value of lpq VDD Ca Rin ww ww R₁ R₂ RD www Cc2 Rs www RL Vo
- 1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5 V, VCC= 9 V, VCE= *:4 V, and RB=D 100 kQ will be equal to 1 KO O 1.1 KQ O 1.2 KQ O 1.3 KQ O What happens if the input voltage is higher than reference voltage in a ?positive clipper output voltage reference voltage O output voltage = dc positive voltage output voltage = input voltage O output voltage > input voltage1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.
- An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…The input resistance of a silicon transistor is 100 Ω. Base current is changed by 40 µA which results in achange in collector current by 2 mA. This transistor is used as a common emitter amplifier with a loadresistance of 4 KΩ. The voltage gain of the amplifier is-(1) 3000 (2) 4000 (3) 1000 (4) 2000
- A Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?For faithful amplification by a transistor circuit, the value of VCE Should transistor for silicon А. Вe zero В. Ве 0.01V C. Not fall below 0.5 V D. Be abvove 1V D В АConsider the BJT circuit in Figure 6. Assume that the following values remain constant duringthe operating conditions, B = 100 and VBE = 0.65V, (a) Determine whether the transistor is operating under cut-off, linear or saturation condition if base current is increased to 1.0 mA. Assume VCE(sat) = 0.3V. (b) If a PZT3904 transistor is used and the circuit is operating at the temperature of 100 C o .Referring to the data sheet in Appendix 1 and the circuit operating with the base current and VCE(sat) as in part (a), i. Determine the power rating of the transistor at the given operating temperature.ii. Determine the maximum value to which VCC can be adjusted without exceeding a rating.Which rating would be exceeded first? I sent Part A before this, it might be resolved