Assuming that the silicon specimen is doped with 10^15 P atoms per unit volume (cm^3), find the donor concentration Np, acceptor concentration Na, electron concentration n, and hole concentration p
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- How is a solid-state diode tested? Explain.Assuming an ideal diode model for all the diodes in the circuit below, Calculate the voltage across and current flow through each diode R1 9k0 IN1199C 01 18k IN1199C D3 IN1199C 12 1k0 R4 SkO 1- V 11 mA 0.5 mA 0.1 A OConsider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
- Q/ Assume each diode in the circult that shown below is silicon diode. Determine the value of R, required such the current passing through D, is one half the value of the current passing through D2. Dz 5.6V 1 ΚΩ D3. V out 5 MO 3 KO O5.5 KO O3.5 MQ 5 KO O 3.5 KO 2.5 KO 3 MQ 5.5 MQ 2.5 MO Back Next Page 2 of 3 Clear form er Eubmn: passwConsider an p-type silicon for which the dopant concentration Np = 1018/em3. Find the electron and hole %3! concentrations at T 350 K. electron = 1018 cm3, & holes= 2.25 x 102/cm3 ст electron = 2.25 x 102/cm3 & holes= 2.25 x 104/cm3 104 /em3 electron = 1018/cm3 & holes= 10o18 cm3 electron = 17.22 x & holes= 1018 cm3 %3DCalculate the junction depth and the total amount of dopant introduced after pre deposition process performed at 975° C using diborane gas for 60 minutes in a neutral ambient. Assume the substrate is n- type silicon with Np 7.2 x 1016 cm3 and the boron surface concentration is Cs 6 x 1019 cm3
- Assuming an ideal diode model for all the diodes in the circuit below, Calculate the voltage across and current flow through each diode R1 D2 9kQ 1N1199C R2 D1 18k0 1N1199C V2 12 V R3 1kQ D3 1N1199C R4 5k0Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6
- A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3Determine the voltage across the silicon diode assuming the complete diode model. Write the answer in terms of V and in four decimal places. r'd 10 ohms r'R = 100 Mohms R1 R2 13 5kQ 5kQ V1 D1 V2 20V 40V 0.Consider an n-type silicon for which the dopant concentration Np= 1016/cm. Find the electron and hole concentrations at T=350 K. electron = 1016/cm³ & holes= 17.22 × 106 cm3 electron = 2.25 × 104/cm3 & holes= 2.25 x 104/cm3 electron = 17.22 × 100 /cm³ & holes= 1016/cm3 electron = 106/cm3 & holes= 1016 cm3