Assuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3 x 10' (0-m)* and 19.32 g/cm?, respectively. (a) Calculate the number of free electrons per cubic meter for gold (b) Compute the electron mobility for gold.
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- Assuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3 x 10' (N-m)1 and 19.32 g/cm3, respectively. (a) Calculate the number of free electrons per cubic meter for gold (b) Compute the electron mobility for gold.Question-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.A conductive wire has a conductivity of ( 0.649 × 10^-8) at room temperature are ( 5.8 x 1028) conduction electron/m.calculate the mobility,resistivity and relaxation time of electrons
- In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.Pure silicon wafer at the room temperature has an electrical conductivity of 5.5x1040'm3. The electron and hole mobilities of charge carriers are 0.35 m2 / V's1 and 0.12 m2 / V's' respectively. Compute electron and hole concentrations at room temperature.An AL wire with an atomic mass of 26.98 g/mole with a cross sectional area of 4 x 10-6 /m2 carries a 5Acurrent. Find the drift velocity of the electrons in m/s through the wire, assuming that each Al atomcontributes an electron. The density of Al is 2.7 g/cm3.
- Silicon has a conductivity of 5×10-4 (Q.m)-1 when pure. How many arsenic atoms/m3 are required so that the conductivity of 200 (Q .m)-1. The mobility of electrons is O.13 (m2/V. Sec), mobility of holes is 0.05(m2/V.Sec) O 2.4038*10^16 /m-3 O 9.6153*10^21/m-3 O 4*10^5 /m-3 O 9.4089*10^5 /m-3 O other:The diffusion constant for injected electrons in a molecular crystal is 1x10^-2 cm^2/s at room temp. What is the mobility? What is the drift velocity in n electric field of 1x10^5 Volts/cm?Aluminum has a density of 2.70 x 103 kg/m3 at a temperature of 293 K, and its molar mass is 26.98 g. (a) Compute the number of aluminum atoms per unit volume at that temperature. (b) Use the fact that EF 11.63 eV for aluminum at 293 K to fi nd the number density of free electrons. (c) Combine your results from (a) and (b) to estimate the number of conduction electrons per atom—the valence number for aluminum
- Copper, a monovalent metal, has molar mass 63.54 g/mol and density 8.96 g/cm3. What is the number density n of conduction electrons in copper?Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m/V.s.Given the fermi energy and electron concentration 7.00 eV and 8.0x1026 e /m' respectively of a Copper of resistivity 1.7x10 N.m, calculate the mean free path. 8- (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nm