At the temperature (300° k) we find that (n and (n = 2.5 x 1019) e/m³ in germanium and the energy gap in silicon is equal to (1.lev) and in germanium is equal to (0.66 ev) What is the ratio of the density of the donor added to silicon to the density of the donor added to germanium that makes the Fermi level in the two materials at the same distance from the edge of the conduction band? 1.45 x 1016) e/m in silicon %3D
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- Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3A forward voltage of 1.75V shifts to the left at a rate 2.65mV per degree centigrade in temperature from 25°C to -35°C. What is the new forward voltage of the diode? * Your answer Find the reverse saturation current of a Silicon diode that displays a forward current of 20 mA at 0.75 V when the Thermal Voltage is 0.038 V. ( Express your answer in 3 decimal places. Your answer can be in p (pico) or n (nano) unit. e.g. only 5 nV. Upload your solution in the file upload question but type Final Answer here. * Your answerAssume that the mobility of electrons in silicon at T = 300 K is un 1300 cm²/V-s. Also assume that the mobility is mainly limited by lattice scattering. Determine the electron mobility(cm²/V-s) at T = 400 K. 844 484 864 854
- Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?Consider an n-type silicon for which the dopant concentration Np= 1016/cm. Find the electron and hole concentrations at T=350 K. electron = 1016/cm³ & holes= 17.22 × 106 cm3 electron = 2.25 × 104/cm3 & holes= 2.25 x 104/cm3 electron = 17.22 × 100 /cm³ & holes= 1016/cm3 electron = 106/cm3 & holes= 1016 cm3Silicon is doped with a phosphorus concentration of 2×1016/cm3. What are NA and ND? What are the electron and hole mobilities? What are the mobilities if boron in a concentration of 3×1016/cm3 is added to the silicon? What are the resistivities?
- uO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6Find the barrier voltage in a pn junction at T=300k assuming VT= 25.9 mV, NA=1018/cm3, ND=1017/cm3 0.0764 V 0.874 V 1.754 VQuestion 1: In the circuit shown below, the output (Vo = 10V Max.) Unipolar. The frequency of Primary is 60 Hz. The diodes are Silicon with VD = 0.7V. a. Sketch the output without a Capacitor. b. Determine Voc without a Capacitor. c. Sketch Vs (at the Secondary). d. Determine Voc with a Capacitor of 10 uF across RL. e. Determine the RMS Value of Vp (at the Primary). f. PIV (Peak Inverse Voltage). 10:1 Output C. 22 k1 All diodes are IN4001. | 00000
- Find values of the intrinsic carrier concentration ni for silicon at -55°C. 1.5 x 1010 carriers/cm3 O 5 x 1010 carriers/cm3 2.7 x 106 carriers/cm2 2.7 x 106 carriers/cm3The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.models Diodes-Piece-wise Problem #1 In the circuit shown below, the voltage source Vin is given by the sketch. Assuming an ideal diode, sketch the waveform resulting at Vout. Use the axis at the bottom to help you sketch the voltage output. 10Ω Vin +7V -7V + Vin Vin AA 1 3 4 5 1 2 D 3 5 V 4 + Vout 5 6 ➡t (ms) +++t (ms) 6