Question 7Consider a bar of p-type silicon that is uniformly doped to a value of N₁ = 2 × 10¹6 cm-³at T = 300 K. The applied electric field is zero. A light source is incident on the end ofthe semiconductor as shown in Figure P6.19. The steady-state concentration of excesscarriers generated at x = 0 is Sp(0) = 8n(0) = 2 x 1014 cm-3. Assume the followingparameters: n = 1200 cm² /V-s, p = 400 cm² /V-S, Tho = 10-6 s, and Tpo = 5 x 10-7 s.Neglecting surface effects, (a) determine the steady-state excess electron and holeconcentrations as a function of distance into the semiconductor, and (b) calculate thesteady-state electron and hole diffusion current densities as a function of distance intothe semiconductor.Lightx = 0p type

Given: Na=2×1016 cm-3, T=300 K, Applied electric field is "0",δp0=δn0=2×1014 cm-3, μn=1200…

Consider a bar of p-type silicon that is uniformly doped to a value of N₂ = 2 × 10¹6 cm-3 at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is Sp(0) = n(0) = 2 x 10¹4 cm-³. Assume the following parameters: n = 1200 cm² /V-s, p = 400 cm² /V-S, Tno = 10-6 s, and Tpo = 5 x 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

Consider a bar of p-type silicon that is uniformly doped to a value of N₂ = 2 × 10¹6 cm-3 at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is Sp(0) = n(0) = 2 x 10¹4 cm-³. Assume the following parameters: n = 1200 cm² /V-s, p = 400 cm² /V-S, Tno = 10-6 s, and Tpo = 5 x 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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