Consider an asymmetric p-n junction which has a heavily-doped n-type side relative the p-type side. ND >> NA. Assume that the p and n-type sides are based from the same material. Sketch the built in electric field and built in potential: with no bias with a forward bias V

Consider an asymmetric p-n junction which has a heavily-doped n-type side relative the p-type side. ND >> NA. Assume that the p and n-type sides are based from the same material. Sketch the built in electric field and built in potential: with no bias with a forward bias V

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter11: Molecular Structure

Section: Chapter Questions

Problem 12P

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Question

Consider an asymmetric p-n junction which has a heavily-doped n-type side relative the p-type side. N_D >> N_A. Assume that the p and n-type sides are based from the same material.

Sketch the built in electric field and built in potential:

with no bias
with a forward bias V

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