Consider an n*-poly-Si-gated long-channel n-MOSFET with W/L = 10, effective gate-oxide thickness Toxe = 2 nm, and substrate (body) dopant concentration Na 1018 cm-3. Esio2 = 3.9, ɛsi = 11.9. (1) Calculate the body effect parameter, y. %3D %3D (2) How can the body effect be minimized2

Consider an n*-poly-Si-gated long-channel n-MOSFET with W/L = 10, effective gate-oxide thickness Toxe = 2 nm, and substrate (body) dopant concentration Na 1018 cm-3. Esio2 = 3.9, ɛsi = 11.9. (1) Calculate the body effect parameter, y. %3D %3D (2) How can the body effect be minimized2

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Consider an n*-poly-Si-gated long-channel n-MOSFET with W/L = 10, effective
gate-oxide thickness Toxe = 2 nm, and substrate (body) dopant concentration Na :
1018 cm-3. Esi02 = 3.9, ɛsi = 11.9.
(1) Calculate the body effect parameter, y.
охе
(2) How can the body effect be minimized?

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