Find the doping density in the n-side in unit of cm-8. Answers within 5% error will be considered correct. Enter answer here
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- How is a solid-state diode tested? Explain.The following circuit uses two Zener diodes with reverse breakdown voltage of 5.1 V for each. (1-a) Explain the operation of the Zener diode in forward and in reverse bias. (1-b) Analyze the circuit thoroughly assuming many source values that lead to all possible cases of diode states. For each case (Hint: 3 cases), re-plot the circuit and develop the relation between the output voltage and the source. (1-c) Draw input and output waveforms accurately over 0.5-ms period. Identify the diode states on the graph based on the categorization of cases from part (1-b). (1-d) Use Multisim to verify all of your results. Compare andcomment.Correct the mistake for the underlined phrase in each of the following 1. With forward bias to a p-n junction , the width of depletion layer remains the same 2. A p-type semiconductor material is doped with donor impurities . 3. When a pentavalent impurity is added to a pure semiconductor, it becomes an insulator 4. Addition of pentavalent impurity to a semiconductor creates many Bound electrons 5. A two-diode rectifier will not operate without a capacitive filter
- Considering a clamper circuit, where capacitance C, load R, the cut-in voltage of diode are unknown, which is the correct statement 1- the dc level of the signal changes 2- the peak-to-peak value of signal changes 3- the shape of signal changes 4- the dc level shifts up 5- the dc level shifts down3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.Lamount of current will flow through the p-n junction germanium diode for a forward bias of 0.15 V with reverse saturation current equal to 1.5 mA and voltage equivalent temperature value of 20.25 mV.
- Draw the characterstic r-l for silicon diode in the forward bais and explain it.In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below. (assume Si diodes) V_DC 0.75 0.25 V_SIN Y SIN as RL -1 v SOR V_SQR 0.75 -0.75 V_TRI V TRI as
- 5. For a silicon diode, the value of the forward-bias voltage typically (a) must be greater than 0.3 V (b) must be greater than 0.7 V (c) depends on the width of the depletion region (d) depends on the concentration of majority carriers 6. When forward-biased, a diode (a) blocks current (b) conducts current (c) has a high resistance (d) drops a large voltageDraw a circuit containing forward bias diode and then draw the graph I/N characteristic in silicon semiconductorJAE To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. A Battery Diode voltage Voltage 0.1V 0.3V 0.5V 0.7V 1.0V 2.0V 3.0V 10.0V Diode Current Forward Bias Condition +||| V Battery Diode Voltage 0.1V 0.5V 2.0V 5.0v 10v 20V 25V 30V Voltage Note: used any electronics software to perform this activity Reverse Bias Condition Diode Current ELECTRONICS ENGINEERING (ECE) DEPARTMENT SINCE VIT