I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature.Calculate the electric conductivity (o) that produced from the minority carriers, givenn; = 2.5 x 1013 /m³, He = 38 m2 /Vs, Hp 18 m2/VsII. Find electron and hole concentration for Si sample at 300k when its doping with 1016Gallium atom / m3 which make Eg= 0.935 ev. Given N. = N, = 2.8 x 1025states/m3.

In p-type semiconductor materials the electrons are the minority carriers. Resistivity =0.3 ohm…

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature. Calculate the electric conductivity (o) that produced from the minority carriers, given n; = 2.5 x 1013 /m³, He = 38 m2/Vs, Hp 18 m²/Vs II. Find electron and hole concentration for Si sample at 300k when its doping with 1016 Gallium atom/m3 which make E, = 0.935 ev. Given N. = N, = 2.8 x 1025 %3D %3D states/m3.

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature. Calculate the electric conductivity (o) that produced from the minority carriers, given n; = 2.5 x 1013 /m³, He = 38 m2/Vs, Hp 18 m²/Vs II. Find electron and hole concentration for Si sample at 300k when its doping with 1016 Gallium atom/m3 which make E, = 0.935 ev. Given N. = N, = 2.8 x 1025 %3D %3D states/m3.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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