In a p+-n junction diode, if the minority carrier recombination rate is increased by 100 times, how will the diode current change (in magnitude)? (a) Only the forward current will increase. The reverse current will not change. (b) Only the reverse current will increase. The forward current will not change. (c) Both the forward and reverse current will increase. (d) Both the forward and reverse current will decrease. Solution: (c)
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- Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSEGiven the clamper circuit below, assume that the value of R and C are large enough so the voltage across the capacitor does not change significantly during the interval of time. a. Using the simplified diode model, simulate the action of the circuit when the diode is in forward and reverse bias condition and measure its output voltage. b. Draw the output waveform of the circuit. VIN +8V ER 1.3V. -8VWhat will be the value of the reverse saturation current for a Si diode operating in forward bias mode. The following information is given: Diode current 3 A Voltage across diode 0.25 V. Temperature is 300 K.
- Determine the voltage across the diode in the figure below, using the complete diode model with: r'd = 10-? and r'R = 100-M?a. The value of the forward current. (in Amperes)b. The value of the forward voltage. c. The value of the voltage across the diode.A silicon diode has a saturation current of 5nA at 250C. What is the saturation current at 1000C? For the given series diode configuration, determine Va, Is, and Vz. Si EE 10 V (a)Plot the I-V characteristics of a PN junction diode (linear and log scale) for different temperatures and plot the characteristics. Explain the observed behavior.
- Determine the reverse voltage and reverse current for the diode in the Figure below for each of the diode models. Also find the voltage across the limiting resistor in each case. Assume IR = 1-µA. a. The value of reverse current, assuming practical diode model. b. The value of reverse voltage, assuming practical diode model. c. The value of voltage across the limiting resistor, assuming practical diode model.Determine the reverse voltage and reverse current for the diode in the Figure below for each of the diode models. Also find the voltage across the limiting resistor in each case. Assume IR = 1-µA. a. The value of reverse current, assuming ideal diode model. b. The value of reverse voltage, assuming ideal diode model. c. The value of voltage across the limiting resistor, assuming ideal diode model. d. The value of reverse current, assuming practical diode model. e. The value of reverse voltage, assuming practical diode model. f. The value of voltage across the limiting resistor, assuming practical diode model. g. The value of reverse current, assuming complete diode model. (in µA) h. The value of reverse voltage, assuming complete diode model. (in mV) i. The value of voltage across the limiting resistor, assuming complete diode model. (in V)JAE To sketch the characteristic curve of the diode you need to vary voltages on diode and measure current flowing during forward and reverse bias condition. Fill up the table below using circuit shown and vary battery voltages. Measure voltage and current of diode then sketch the graph. Voltage X axis and Current Y axis. A Battery Diode voltage Voltage 0.1V 0.3V 0.5V 0.7V 1.0V 2.0V 3.0V 10.0V Diode Current Forward Bias Condition +||| V Battery Diode Voltage 0.1V 0.5V 2.0V 5.0v 10v 20V 25V 30V Voltage Note: used any electronics software to perform this activity Reverse Bias Condition Diode Current ELECTRONICS ENGINEERING (ECE) DEPARTMENT SINCE VIT
- Draw the circuit diagrams of a p-n junction diode in Forward bias and Reverse bias. Draw the I-V characteristics for the same and discuss the resistance of the junction in both the cases.The Leakage current in diodes is produced in O a forward biased diode. can be found in forward biased and reverse biased diodes. O a reverse-biased diode. while used a diode as a simplified diodes.• A Si diode at a temperature of 25°C has VD = 0.7V at Is = 10nA. The temperature is raised to 125°C. 1. Calculate ID at 25°C. 2. What is effect of rise in temperature on VD & IS 3. Calculate ID at 125°C.