In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 1.7 µW with the internally emitted photons of wavelength 2 = 0.6 um. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: O a. 7.112e-7 A O b. 4.522e-6 A O c. 2.720e-5 A O d. 1.071e-4 A e. 9.010e-6 A
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- Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICEVCE A full-wave bridge-rectifier circuit with a 110 Q load operates froma 16 V (peak-to peak) 50-z supply. For at050 f smoothing capacitor, calulate the ripple amplitude. Use the constant-voltage-drop diode model with VD= 0.6 V. Select one: O a. 0.64 V O b. 1.18 V Oc None of these. O d. 1.28 V O e 0.59 V What is the function of this circuit if each input, Va V and ve, can assume a logicvalue of 0 (-SV) or 1 (OV)? is the output*42. a. Determine VL, IL, Iz, and Ir for the network of Fig. 2.186 if R1 = 180 N. b. Repeat part (a) if R1 = 470 N. c. Determine the value of R1 that will establish maximum power conditions for the Zener diode. d. Determine the minimum value of R1 to ensure that the Zener diode is in the “on" state. Rs 220 2 IR Vz = 10 V RL VL 20 V Pz, = 400 mW Zmax FIG. 2.186 Problem 42.
- An intrinsic Si semiconductor sample has a length of L=100 um, at 300 K the sample is optically excited resulting in 1×10- cm`excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of 10 V, the change of sample resistance will be: OA. 3239 Ohms O B. 0.009000 Ohms OC. 9.000e-4 Ohms O D. 31.24 Ohms OE. 3.239e5 OhmsCalculate the base current required to switch a resistive load of 8mA for an npn- transistor with B = 156. Lütfen birini seçin: a.113.21 pA b.84.97 µA c.66.67 µA d.96.38 pA e.51.28 µASemiconductor LED's have a slow response tiте аnd hencе a low frequency operation and low band width because: а. their produced photons are mainly due to the diffusion process of the injected carriers b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction С. Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage.
- The maximum wavelength of light that a certain silicon photocell can detect 1.11μm1.11μm.a. What is the energy gap (in electron volts) between the valence and conduction bands for this photocell?b. Explain why pure silicon is opaque.Q. 2. In a P-N junction diode, width of depletion layer is 0· 54m and potential barrier is 0-5V. Calculate the barrier electric field.A laser beam of 0.005 W with photon energy of 1.6 eV is incident on a GaAs PIN phot-detector. The detector i-region width is 6 pum, its cross sectional area is A= 0.8 cm, and its absorption coefficient at the incident photon energy is agaAs cm'. If 20\% of the incident photon flux is reflected back at the detector surface, calculate the detector photo-current IL: 1x 10 Select one: O A. IL = 0.00230 A O B. IL = 9.02e-4 A O C. IL = 8.00e-5 A O D. IL = 8.00e-4 A OE. IL = 0.00130 A Clear my choice that will absorh 60 %% of
- a) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)Ob.4.522e-6 A Oc 2.720e-5 A O d. 1.071e-4 A O e. 9.010e-6 A A Alo.35Gao.65As/Ga.As/Alo.35GA0.65As pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of Tr-96 ns. At 300 K the LED is biased with a voltage V= 2 V and the injected current at the biased voltage is I= 66 mA. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1 You are asked by your supervisor in a company to design a Alo.„Ga0.6As/GaAs/Alo Ga0.6As pn" DH surface emitting LED to be operated at 300 K emitting in air, given the following design parameters and information: 1. The semiconductors from which you will fabricate the LED is totally defect free.Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…