In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 1.7 µW with the internally emitted photons of wavelength 2 = 0.6 um. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: O a. 7.112e-7 A O b. 4.522e-6 A O c. 2.720e-5 A O d. 1.071e-4 A e. 9.010e-6 A

Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
Problem 12P
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In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally
generated power is 1.7 µW with the internally emitted photons of wavelength 2 = 0.6 um. If the radiative
recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be:
O a. 7.112e-7 A
O b. 4.522e-6 A
O c. 2.720e-5 A
O d. 1.071e-4 A
e. 9.010e-6 A
Transcribed Image Text:In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 1.7 µW with the internally emitted photons of wavelength 2 = 0.6 um. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: O a. 7.112e-7 A O b. 4.522e-6 A O c. 2.720e-5 A O d. 1.071e-4 A e. 9.010e-6 A
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
h
6.63 x 10–34 J.s
Si
Ge
GaAs
9.11 × 10–31 Kg
E, (eV)
п; (ст-3)
Mn (ст* /V — s)
(cm²/V – s)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
-12
8.85 x 10
F/m
Eo
450
1900
400
Hp
Ne (cm-3)
N, (cm-3)
34
1.05 x 10
J –
- S
2.78 x 1019| 1.04 × 1019 4.45 × 1017
K
8.6 x 10-5 eV/K
9.84 × 1018
6 x 1018
7.72 × 1018
KT/q
26 mV (T = 300 K)
m/m.
0.082
0.98
0.067
KT
26 meV (T = 300 K)
m/m.
Er (F/m)
0.28
0.49
0.45
3 x 108 m/s
11.7
16
13.1
Nair = 1
NGAAS = 3.66
Some useful relations
EgAl Ga1-zAs (x) = 1.424 + 1.247x
EgIn,Ga1-2 As (x) = 0.36 + 1.064.x
1 eV = 1.602 × 10-19 J
1 KG = 1 × 10-5 Wb/cm2
Transcribed Image Text:UNIVERSAL CONSTANTS Properties SEMICONDUCTOR h 6.63 x 10–34 J.s Si Ge GaAs 9.11 × 10–31 Kg E, (eV) п; (ст-3) Mn (ст* /V — s) (cm²/V – s) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 1500 3900 8500 -12 8.85 x 10 F/m Eo 450 1900 400 Hp Ne (cm-3) N, (cm-3) 34 1.05 x 10 J – - S 2.78 x 1019| 1.04 × 1019 4.45 × 1017 K 8.6 x 10-5 eV/K 9.84 × 1018 6 x 1018 7.72 × 1018 KT/q 26 mV (T = 300 K) m/m. 0.082 0.98 0.067 KT 26 meV (T = 300 K) m/m. Er (F/m) 0.28 0.49 0.45 3 x 108 m/s 11.7 16 13.1 Nair = 1 NGAAS = 3.66 Some useful relations EgAl Ga1-zAs (x) = 1.424 + 1.247x EgIn,Ga1-2 As (x) = 0.36 + 1.064.x 1 eV = 1.602 × 10-19 J 1 KG = 1 × 10-5 Wb/cm2
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