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- Q8) Consider an n-type silicon crystal doped with 10º phosphorus (P) atoms/cm'. What are the electron and hole concentrations of this crystal if its intrinsic carrier concentration is 1 cm? Then, if it is doped with 10" boron (B) acceptors, what will be the electron and hole 10 concentrations?EE309-LTSpice HM.pdf 1) Design a simple diode circuit example. Measure current and voltage on diode and resistance on both forward and reverse bias case.Draw and compare the VI characteristics of a silicon diode and an ideal diode.
- In junction diode forward biased the thickness of the depletion region is --- The region in junction diode that (V=Vzk) is called--- The device (or element) that used to protect electronic components which are vulnerable to reverse voltages is it used to protect against high voltage surges. Your vertically of the input signal. circuit is used to shiftTrue False Impurity in a semiconductor would increase holes or free electrons The drift current is due to the difference of the electrons and holes densities, Total current in semiconductors is due to both holes and electrons movements If ND >> NA, then we have n- Туре semiconductor A trivalent atoms when add to Ge great an p- Туре semiconductor.The function of zener diode is to provide a constant output voltage to a load. this process is called One types of diodes are typically used for power supply applications which always called In a circuit that composed of a single diode that connects an AC source to a load. the diode acts as function of Zener diode is widely used as
- m/s uestion 7 is an example of good conductor of electricity. pt yet swered a. silicon larked out of 00 Ob. rubber Flag question O c. germanium O d. silver Question 8 Not yet answered Marked out of 1.00 Flag quest on. When UV photons with 380 nm wavelength strike on a semiconductor, a red photon emission from the semiconductor is observed. Explain the photon emission process in this semiconductor on the band diagram.Q2/write true or false and correct the false. For ten only 1-in practical model the potential barrier includes at the model 2-In complete model includes dynamic resistance to provide path to reverse current 3 The atom by ionize is emission energy equal to or greater than energy level of it 4-To improve the conductivity of pure semi-conductor we use doping 5-In P-type semi-conductor the Fermi level lies near the donor energy level 6-In ideal model the voltage across the terminals diode in reverse bias is equal zero 7-The current in semi- conductor produced by electrons 8-pentavalent impurity is added to silicon to create N-type 9-The depletion region consist of ions only 10-purpose of impurity pentavalent is increases resistivity 11- Condition to diode operated and passes current is connected in forward only