Problem 1. A diode has p-side doped with B to a level of 5x10¹7/cm³ and n-side doped with P to a level of 2x10¹8/cm³. (a) What is the majority carrier in the p-side quasi-neutral region? (b) What is the mobility of the holes in the p-side quasi-neutral region? (c) What is the depletion region width on the n-side? (d) What is the depletion region width total? (e) What is the concentration of holes in the n-side of the diode at equilibrium?

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Problem 1. A diode has p-side doped with B to a level of 5x107/cm² and n-side doped with P to a level of 2x1019/cm².
(a) What is the majority carrier in the p-side quasi-neutral region?
(b) What is the mobility of the holes in the p-side quasi-neutral region?
(c) What is the depletion region width on the n-side?
(d) What is the depletion region width total?
(e) What is the concentration of holes in the n-side of the diode at equilibrium?
Transcribed Image Text:Problem 1. A diode has p-side doped with B to a level of 5x107/cm² and n-side doped with P to a level of 2x1019/cm². (a) What is the majority carrier in the p-side quasi-neutral region? (b) What is the mobility of the holes in the p-side quasi-neutral region? (c) What is the depletion region width on the n-side? (d) What is the depletion region width total? (e) What is the concentration of holes in the n-side of the diode at equilibrium?
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