Q2: The region x<0 contains a dielectric material for which &,1 = 2 while the region x > 0 is characterized by&r2 = 3 let E₁ = 10 ax +20 ay +10az. Find E2,01,02 and P2.
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- An electric circuit has a battery with an EMF of 1.50 V. Its positive terminal is connected to its negative terminal by a copper wire in a circular loop having a radius of 0.500 m. Solve for the drift velocity in the wire if there is one free electron per copper atom. Detailed assumptions: - The size of the cell is negligible compared to the length of the circuit. - Copper resistivity: p- 1.80x10-8 Q-m - Copper density: D = 8.96x10° kg-m-3 - Copper relative atomic mass: ma = 63.5 g/mol Express your answer in mm/s.A solenoid is to have an inductance of 0.285 mH, a cross-sectional area of 6.00x10-4 m2, and a length of 36.0cm. How many turns per unit length should it have? (Ans. 1.02x103 turns/m) If the self-induced emf is -12.5 mV at a given time, at what rate is the current changing at that instant. (Ans. 43.9 A/s)Q2) a) Can the dielectric materials store energy? Expain the reason? b) What are the boundary conditions of a perfect dielectric materials?
- For a given RC charging circuit with R 82KOhms, C 150UF and Vs 18 V, i. Calculate the capacitor charging voltage at t- ii. Specify the charging current at 2T where T= RC. iii. Explain the effect in the charging period if the value of R is doubled with the capacitance value of C kept constant. Prove your answer by computing the resulting full-charge periods when R is 82KOhms and when R is doubled with C kept constant. %3D (1 mark) (1 mark) 3D3T. (2 marks)A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm² through this sample. Sample cross-sectional area is 0.1 cm?. Hn= 4000cm2/V-s Hp= 1000 cm?/V-s. What is the applied voltage? Please write your answer as a V and don't use units in the answer."Given the potential function V = x²ytz+3), determine the electric potential at (3, 4, -6)." -108 ml/C 324 mJ/C -108 J/C 324 J/C
- Given that the potential V = 2x²y3 + 4xyz² mv. Find E at (4,5,8). Give expression for pr c/m³. 712/mQ2/ Consider a bar of p-type silicon that is uniformly doped to a value of N₁ = 2 x 106 cm³ at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure. The steady-state concentration of excess carriers generated at x-0 is (0)=2x10¹4 cm³. Assume the following parameters: H = 1200 cm² /V-s, Tho = 106 s. Neglecting surface effects, (a) determine the steady-state excess electron concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron diffusion current density as a function of distance into the semiconductor. Light x=0 p typeRank in order, from largest to smallest, the clectric field strengths Eig to fic at points B and C. 2r B 24
- Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, 3.8 and o = 4 S/m between the plates. Potential difference plates A across is VAB (t) = Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: (i) Q(t) if the capacitance is 2.135 x 10-11 F (ii) M(t) if electric field within the capacitor, E(t) = M(t) fV/m Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. UNIVE (iv) Displacement current density and displacement current. arch ASUS VivoBookBoth the Biot-Savart and Coulomb's laws exhibit an inverse-square relationship between field and source.? True O False2/ for the figure shown below find How much the potential Energy or the work Wa-b which s needed to move the test charge qo from point a to b along the radiallne if :qo= 2nc, 4= 5nc ra= 10 cm, b= 20, And from the value of the work find How much the Potential difference at g7 Testcharge g . moves fromat0b along radial line: fromg. E