Q3Figure 3 shows two current mirrors based on MOSFET.Derive a formula relating the input current Iin to the output current Iout for thecurrent mirror on the left of Figure 3 stating any assumption.(a)(b)Derive the input resistance Rin and output resistance Rout for the circuit on theleft of Figure 3. State any assumption.(c)Derive a formula relating lin and Iout for the circuit on the right of Figure 3assuming that M1 and M2 are identical, and that the length and width of thechannel for the transistor M4 are double respect to those of M3. State anvassumption.VDDM3M4outIoutM1M2M1M2Vss = 0 VVss = 0 VFigure 3

Given the circuit: a) We need to derive the formulae relating Iin and Iout for left-side circuit.…

Q3 Figure 3 shows two current mirrors based on MOSFET. Derive a formula relating the input current lin to the output current Iout for the current mirror on the left of Figure 3 stating any assumption. (a) Derive the input resistance Rin and output resistance Rout for the circuit on the left of Figure 3. State any assumption. (b) (c) Derive a formula relating lin and Iout for the circuit on the right of Figure 3 assuming that M, and M2 are identical, and that the length and width of the channel for the transistor M4 are double respect to those of M3. State anv assumption.

Q3 Figure 3 shows two current mirrors based on MOSFET. Derive a formula relating the input current lin to the output current Iout for the current mirror on the left of Figure 3 stating any assumption. (a) Derive the input resistance Rin and output resistance Rout for the circuit on the left of Figure 3. State any assumption. (b) (c) Derive a formula relating lin and Iout for the circuit on the right of Figure 3 assuming that M, and M2 are identical, and that the length and width of the channel for the transistor M4 are double respect to those of M3. State anv assumption.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Describe the application and use of Junction Field-Effect Transistors (JFETs)
3. Write down which transistor structure each curve characteristic belongs to in the figure. Ip -VGS -VGS +VGs (c) VGS (b) (a)
A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) I
Describe the operation of an n and a p type enhancement and depletion mode MOSFET
For the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQ
The arrow on the symbol of MOSFET indicates O a. that it is a N-channel MOSFET O b. the direction of conventional current flow O c. that it is a P-channel MOSFET O d. the direction of electrons
Explain the two types of MOSFETs (draw the physical structure as well). Also explain themajor difference between them regarding mode of operation?
A circuit responding to temperature is shown in figure 6. Assume the diode equation is given by Ia Ioe(qVa/kT). What is the DC operating point of the circuit at the temperature T. Also determine the small signal output swing Av, due to an incremental change in temperature AT. For this question assume Rį = 0. Heat T+AT V. DD D'B R₁ OV +AV Figure 6: Temperature sensor
with the aid of a diagram describe a simple common emitter circuit with npn bipolar transitor and discus the relationship between base emitter voltage and base current
a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.
Discuss High level modulator: circuit diagram and operation - Collector modulator
(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.