Q6/ The electric field strength is 100v/minan n-type semiconductor and the Hall factor is 0.014m2/e. Calculate the current density if the mobility is un-0.36m/cs
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A: Given data: Na=1016 cm-3ni=109 cm-3μn=1000 cm2/V-sec Here Δn=3×1013 cm-3
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A: Given: Si=5×1028 atoms /m3 one bond / 1012 atoms Eg=1.1eV New temperature =75°C
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A: Given: ϕm=4.55V N=1016cm-1 T=300K x=4.01
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- How many valence electrons are generally contained in materials used for insulators?A silicon semiconductor has a shape of a rectangular bar with a cross sectional area of 1x10-6cm2 and a lenght of 0.1 cm. How do i calculate the current through the semiconductor if a basis of 5 volts is applied across its length?Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?
- Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductorFor the semiconductor diode the "on" state will support a current in the direction of the in the symbol. Your answer The region of uncovered positive and negative ions is called the due to the diminution of free carriers in the region. (Two Words) Your answer What is the net flow of charge in the absence of an applied bias across a semiconductor diode? Your answer
- Suppose a semiconductor has ND=1016/cm3and ni =1010/cm3. What are the equilibrium electron and hole concentrations?Using drawing and Explanation. Effect of light: What will happen if you shine a light on three parts of the p-n junction. Show the effect of light separately on p-si, n-si, and depletion regions. ww.Electrons in silicon have a mobility of 1000 cm / V - sec. The electric field is applied to make the electrons reach a velocity of 3 x 10 cm / sec. Assume that the mobility is constant and independent of the electric field. What voltage is required to obtain this field in a 5 um thick region? How much time do the electrons need to cross the 5 um thick region?
- Please answer both question or give someone else to answer. Need small explanations. Which of the following are the majority carriers in p-type semiconductors? a. electrons b. photons c. holes d. neutrons Two capacitors C1 = 1.5 μF and C2 = 5 μF are in series. If the charge stored by C1 is 10 C, determine the charge stored by C2. a. 3 C b. 10 C c. 1.5 C d. 4 CFor the circuit below with E = 10 V, R = 5800 N. Find the following: a) current in the circuit b) voltage across the diode c) voltage across the resistor Anode (A) Cathode (K) b E R wwwwA non-pure semiconductor has a gap of energy equal to 1ev. The density of the holes for it is equal to 10 m at a 18 -3 temperature of 300k and the density of 14 -3 the electrons is equal to 10 m. Find the location of the Fermi at a temperature of 500k