9:1P iO 1.6K/s l , A•.. A fOQuiz3_A.pdf->Class-AQ1: With the help of Thevenin's theorem, find the labeled current and voltage in Fig.1. Assumean ideal diode model.5ka5ka10vovo20ka40kn40kaFig.1Q2: For the circuit shown in Fig2, plot the waveform resulting at Vo. Assume ideal diode modelfor DI and constant-voltage drop model for D2.ovoD1D210 sin(wt)Fig. 2wwww

V-1010kΩ+V20kΩ+V40kΩ+V40kΩ=0Since the diode is ideal diode we we will replace it by short circuit:…

QI: With the help of Thevenin's theorem, find the labeled current and voltage in Fig.1. Assume an ideal diode model. Ska Ska 10v ovo 20ka 40ka 40ka Fig.I Q2: For the circuit shown in Fig2, plot the waveform resulting at Vo. Assume ideal diode model for DI and constant-voltage drop model for D2. ovo D1 D2 10 sin(wt) 5k Fig. 2 wwww

QI: With the help of Thevenin's theorem, find the labeled current and voltage in Fig.1. Assume an ideal diode model. Ska Ska 10v ovo 20ka 40ka 40ka Fig.I Q2: For the circuit shown in Fig2, plot the waveform resulting at Vo. Assume ideal diode model for DI and constant-voltage drop model for D2. ovo D1 D2 10 sin(wt) 5k Fig. 2 wwww

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Which of the following options is FALSE about the semiconductor diodes? Lütfen birini seçin: O A. Diodes are made of semiconductor materials with additional dopping to enhance their conducting properties. O B. They are non-linear devices; hence, if one wants to draw their current-voltage graph, they will end up with an exponential plot. O C. The type of the semiconductor material matters in the characteristics of the device; such that the forward-bias voltage (Vp.) is different for Ge and Si based diodes. O D. They ideally let the electric current flow in the direction from cathode terminal to anode terminal, while completely blocking it in the direction from anode to cathode.
For each of these circuits, find an expression for Vout as a function of Vin and the components given. Use the exponential model for your diode (ID = Ise³D/VÃ). Then, if we set Is = 10-¹4A, R 10k and Vin = 1V, find the minimum positive power supply needed for the expression to hold true. a. Vin + R ➜ MI Vout b. Vin o + -。 Vout R
Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to add impurity increase the resistivity apply heat None of the them
In the circuit shown below. Let V-33 V and i,-28 mA and Voo -0.7 V: iD Vcos(at)V For t = 0s, the current in the diode equals: Ca. 0 mA Cb. 2 mA Cc. 4 mA Od. 2 mA Ift = T/4, then the current in the diode equals: Ca. 8.92 mA Ob. 5.71 mA Oc 7.14 mA Od. 4.57 ma Ift- T/2, then the current in the diode equals: Ca. 10.39 mA Cb. 16.39 mA Oc 14.39 mA Od. 12.39 mA
A diode has 1 mA at 0.6 V and 120 mA at 0.8 V Find a piecewise model (battery+resistor) for that diode (VDa and Rp). Assume V> VT and take VT = 25 mV. nmadı Note that because of the approximations, your result might be slightly different than the correct answer. However, it should be very close to it; hence, in that case, simply go for the choice that is closest to your result. erinden amiş ru işaretle Lütfen birini seçin. O A. VD. =21 V, Rp=7698 2 O B. VD.-31.393 V, Rp-12.896 2 O C. VDo=1.019 V, Rp-814 k2 O D. VD-8.5968 V, Rp-4.27 kN O E. VD. =0.5984 V, Rp=1682 OF VD=2.498 V, Rp=2.02 k2 O G. VD =8.458 V, RD=15.7252
sponse. Question 8 NPN BJT is considered as two diodes their anodes are connected together. True False Moving to another question will save this response. e to search
1. For each of these circuits, find an expression for Vout as a function of Vin and the components given. Use the exponential model for your diode (ID = IseVD/VT). Then, if we set Is = 10-¹4A, 1V, find the minimum positive power supply needed for the expression to R = 10k and Vin = hold true. a. Vin o b. Vin o + R M -1₁ Vout Vout R
Consider a diode biased with a constant current which is measured to have a voltage V₁ at temperature T₁ and voltage V₂ at T₂. What is bandgap energy EG?
Q1: Two diodes are required to handle a source voltage of 8kV with I-V performance shown below... 1. How these diodes can be connected to handle the source voltage? 2. If they are required to handle equally voltage, how much will the sharing resistances be ? if Rs1=90% Rs2. Find the values of Rs1 & Rs2 3. The obtained voltages across the diodes at equally shared resistances of 50k Ohm. while the currents are 40 mA and 50 mA respectively. Diodes' I-V curve ID D1 D2 8kV 6kV 4kV 40mA 50mA 60mA VAK
A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.
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What is the value of reverse recovery charge developed in diode which is having the rate of fall of diode current 34.7 A/us and t, is equal to 5.6 us. O a. 1088.19 µC O b. 971.60 µC O c. 313.60 µC O d. 544.10 uC