Question 4 A silicon p-n junction diode has the following parameters at 300 K, Na = 5 × 1017 cm-³ and Na = 1 x 1015 cm-³, Dn = 8 cm²/s, D, = 10 cm²/s, T =1 x 10-® s, t, = 1 × 10-7 s, %3D E, = 11.7, n = 1 × 1010 cm-3. When a forward bias of 0.6 V is applied, (a) Determine the minority carrier density at the edge of depletion in the n- and p-side. (b) Determine the diode current. (c) Determine the value of the distance of the plane from the depletion edge where the current due to the hole transport is equal to the electron transport.

Question 4 A silicon p-n junction diode has the following parameters at 300 K, Na = 5 × 1017 cm-³ and Na = 1 x 1015 cm-³, Dn = 8 cm²/s, D, = 10 cm²/s, T =1 x 10-® s, t, = 1 × 10-7 s, %3D E, = 11.7, n = 1 × 1010 cm-3. When a forward bias of 0.6 V is applied, (a) Determine the minority carrier density at the edge of depletion in the n- and p-side. (b) Determine the diode current. (c) Determine the value of the distance of the plane from the depletion edge where the current due to the hole transport is equal to the electron transport.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 3RQ: Diodes and rectifiers allow current to _________. flow in one direction only flow in both...

See similar textbooks

Similar questions

Diodes and rectifiers allow current to _________. flow in one direction only flow in both directions divide paths of flow none of the above
Determine which diodes are forward-biased and which are reverse-biased in the configurations shown in Figure 4. Assuming a 0.7-V drop across each forward-biased diode, determine the output voltage. O+5 V -10 V R DI +s vOK D, -SVOKH D3 +s vOK D4 -5 voK DI -5VOK Dz OVout OVout +5 voK Figure 4.
-VBIAS + 0.7 VBIAS - 0.7 -VBIAS - 0.7 With the given circuit below, before the diode will become forward-biased and conduct, the voltage must equ v VBIAS + 0.7 Silicon diode) at the point before diode. R1 I D, VIN VOUT VBIAS =
Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below (assume Si diodes) V_DC V DC 0,75 (1+ 0.25 V_SIN V SIN RL -1 V SOR V_SQR 0.75 -0.75 V TRI 1 V_TRI -1
In the Figure as shown below the current (I) will be equal to: ---- Assume that all diodes are silicon -practical diode model 4 KUZ lovt 32 KSL 2.2 mA O 2.3 mA O 2.4 mA O 1.1 mA O
1. Determine Vpout for the circuit in below and draw Vauts assume the diode is the silicon type. 10 k +10 V-- V. ov R, 100 k IN914 -10 V- 2. What is the output voltage that you would expect to observe across R, circuit of Figure below? Assume that RC is large enough to prevent significant capacitor discharge. +24 V 10 uF RL 10 kn V. ov. IN914 -24 V
Given the following circuit with VDD= 9.2 V, R=2.3 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. I VDD a. 0.004000 A O b. 3.717391 A OC. 0 A d. 4.000000 A e. 0.003717 A R + VD -
for the circuit shown in the figure, plot the output voltage waveform and present the resolution in sections considering that the diodes are silicon. D4 23 100k D6 100k 24 DIODE SV Vs4 [v] 20 Vo -20
A breakdown diode has iD=−10−6(1+vD/5)3 for −5 V<vD<0 where iD is in amperes. Plot iD versus vD in the reverse-bias region. Find the dynamic resistance of this diode at IDQ=−1 mA and at IDQ = -10 mA.
Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below. (assume Si diodes) V_DC 0.75 0.25 V_SIN Y SIN as RL -1 v SOR V_SQR 0.75 -0.75 V_TRI V TRI as
How do you identify the anode of an unmarked diode? When the forward current of a diode increases, its forward resistance The current flowing in a reverse-biased diode circuit is extremely while the resistance of the diode is extremely The Vz of a zener diode will fairly constant even if the power supply voltage The series resistor Rs is used with the zener diode to the zener current Iz to a level.
Given the following circuit with VDD = 5 V, R = 2.6 k, then the current Iis: Use the CVD model for the diode, with VD= 0.65 V. V DD I a. 0.001673 A O b. 0 A O c. 1.673077 A O d. 1.923077 A e. 0.001923 A R + VD -