Question 8 The minority carrier current in a reverse biased p-n junction diode can be increased by (a) Increasing the height of the potential barrier of the junction (b) Decreasing the height of the potential barrier of the junction (c) Decreasing the majority carrier concentrations in p and n-side regions (d) Increasing the density of minority carriers wandering into the depletion region per second Question 9 Choose the correct options from below. The minority carrier concentration at the edges of the depletion region of a p-n junction (a) Decreases from their equilibrium concentration with the increase in forward bias voltage (b) Increases from their equilibrium concentration with the increase in forward bias voltage (c) Increases from their equilibrium concentration with the increase in reverse bias voltage (d) Decreases from their equilibrium concentration with the increase in reverse bias voltage

Electric Motor Control
10th Edition
ISBN:9781133702818
Author:Herman
Publisher:Herman
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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Question 8
The minority carrier current in a reverse biased p-n junction diode can be increased by
(a) Increasing the height of the potential barrier of the junction
(b) Decreasing the height of the potential barrier of the junction
(c) Decreasing the majority carrier concentrations in p and n-side regions
(d) Increasing the density of minority carriers wandering into the depletion region per second
Question 9
Choose the correct options from below. The minority carrier concentration at the edges of the
depletion region of a p-n junction
(a) Decreases from their equilibrium concentration with the increase in forward bias voltage
(b) Increases from their equilibrium concentration with the increase in forward bias voltage
(c) Increases from their equilibrium concentration with the increase in reverse bias voltage
(d) Decreases from their equilibrium concentration with the increase in reverse bias voltage
Transcribed Image Text:Question 8 The minority carrier current in a reverse biased p-n junction diode can be increased by (a) Increasing the height of the potential barrier of the junction (b) Decreasing the height of the potential barrier of the junction (c) Decreasing the majority carrier concentrations in p and n-side regions (d) Increasing the density of minority carriers wandering into the depletion region per second Question 9 Choose the correct options from below. The minority carrier concentration at the edges of the depletion region of a p-n junction (a) Decreases from their equilibrium concentration with the increase in forward bias voltage (b) Increases from their equilibrium concentration with the increase in forward bias voltage (c) Increases from their equilibrium concentration with the increase in reverse bias voltage (d) Decreases from their equilibrium concentration with the increase in reverse bias voltage
Expert Solution
Step 1

Brief description:

PN junction diode is a semiconductor device which is used as a switch, rectifier diode and square law modulator.

Diode is unidirectional device which works only in one direction.

Diode will allow current to flow only from p to n side of the PN junction diode.

Whenever current flows from n side to p side of the diode then this current is known as reverse saturation current.

Generally reverse saturation current is very small hence it is neglected.

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