I. II. Research on other types: PIN, IMPATT, GUNN, and TUNNEL DIODES Diode Approximations R2 = 1.2 kΩ D₁ Si, rg 2 02, TR = 220 k R₁ D₂ Given: R₁ = 2 k MIES E D₁ 吁 R₂ ww R3 = 6.8 kΩ E 10 V R3 D₂: Si, TB = 50,TR = 560 k Apply each of diode approximations and determine: a. Current through D₁ b. Voltage across D₂ c. Voltage across R3

Draw the input waveform and output waveform for the circuit given below with proper values marked in the figure. Assume D1 as germanium and D2 as silicon diodes. Input Vpp%3D20V, V1=3 V and V2=10 V. R D2 D1 Vin Vout V1 V2 Maximum voltage of output waveform Minimum voltage of output waveform Ps

Consider the circuit shown in Figure 2. The cut-in voltage of each diode is . Let and assume both diodes are conducting. Determine if this is a valid assumption and explain your answer. And calculate the values of IR, ID, Ip2, and V.. Rj =1.7 kQ ww VB =1 V D1 Dz R2D 4 kQ Figure 2

For the diodes used , at what Voltage (VD) does condection stars .

True or False. Please explain. thank you As the temperature increases, the forward voltage decreases in a silicon diode. Then, the graph of the forward bias region will shift to the left.

29. Does an increase in reverse bias for a Varactor diode cause an increase or decrease in capacitance? 30. If the load current through a SCR (Thyristor) reduces to almost zero, what will be the result?

The single-phase half-wave circuit with a com mutating diode is used to supply a heavily inductive load of up to 15A from a 200V a.c. supply. Determine the mean load voltage for firing delay angles of 135°, neglecting the thyristor and diode volt-drops. Specify the required rating of the thyristor and diode. * 16.6V 14V 13V 16V

Suppose we have a 10-V-peak sinusoidal voltage source. Draw the diagram of a circuit that clips off the part of the sinusoid above 5 V and below -4 V. The circuit should be composed of ideal diodes, dc voltage sources, and other components as needed. Be sure to label the terminals across which the clipped output waveform vo(t) appears.

Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q

Sketch the transfer characteristic vo versus vi for the limiter circuit shown below. All diodes begin conducting at a forward voltage drop of 0.5V and have of 0.7V when fully conducting at 1mA.