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- Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICE.9:0A Asiacell Q1.jpg Find the current through the diode in the circuit shown. Assume the diode to be ideal. 50 Ω A R1 V = 10 V 50 R2 B ARe 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specify
- : A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.sesThe maximum wavelength of light that a certain silicon photocell can detect 1.11μm1.11μm.a. What is the energy gap (in electron volts) between the valence and conduction bands for this photocell?b. Explain why pure silicon is opaque.Two diodes are connected in parallel as shown below: p(0.c.) = 0.15 p (s.c.) = 0.25 A diode may fail in one of the two ways: by short-circuiting or by open-circuiting. What is the probability that the two-diode arrangement will work as a diode?
- A diode is an electronic component through which an electric current flows according to the potential difference applied across its terminals. The figure to the side shows the typical curve of a diode. At what point on the curve is the resistance of the diode minimum? At what point is it maximum? Justify your answer.Q1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.Conduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and with properties indicated below. Conductor Length Cross-Section Side Length Alpha Beta L/2 8/4 Suppose both conductors are subject to the same potential difference AV across their length while keeping their temperatures fixed. Which of the following is the correct relation between the electric currents, I, and Ig, through Aipha and Beta? O A. I = 81, %3D O B. 8I. = I3 Oc. Ia = 413 O D. 4la = I3
- chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) IIQ3/ compute the require temperature in C° for put a sample of germanium in order to has energy gap equal to 4.6875 x 1018.4 Q: A- For the transistor circuit shown in figure bellow 20 v Determine: 1- Ig , Ic , le and Vce · 2- Sketch the load line (Q-point) of the transistor. 470 2 270 kQ B=125 تمت الاجابة وسارفع الملف لاحقا