Start Now > Combine PDF > Send Files > Store Files 3. A one sided p+/n silicon junction at 300K is doped with NA = 1019%cm³. Design a junction so that C;=8 nF/cm² at a reverse voltage (VR) = 6.0V. Assume Vbi-0.8V. Hint: Calculate Np. 10:22 AM P Type here to search w] 31°C 中 23-Mar-22

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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3.
A one sided p+/n silicon junction at 300K is doped
with NA = 101/cm³.
Design a junction so that C;=8 nF/cm2 at a reverse
voltage (VR) = 6.0V.
Assume Vbi-0.8V.
Hint: Calculate Np.
10:22 AM
Type here to search
31°C
W
23-Mar-22
---
II
Transcribed Image Text:I Homework 6b 03182022.docx.pdf - Adobe Reader File Edit View Window Help Tools Fill & Sign Comment Оpen 3 125% IT Sign In • Export PDF • Create PDF v Edit PDF Adobe Acrobat Pro Easily edit text and images in PDF documents Start Now • Combine PDF • Send Files • Store Files 3. A one sided p+/n silicon junction at 300K is doped with NA = 101/cm³. Design a junction so that C;=8 nF/cm2 at a reverse voltage (VR) = 6.0V. Assume Vbi-0.8V. Hint: Calculate Np. 10:22 AM Type here to search 31°C W 23-Mar-22 --- II
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