Text Problems 4.8 for NMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.
Text Problems 4.8 for NMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter30: Dc Motors
Section: Chapter Questions
Problem 6RQ: What is CEMF?
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Text Problems 4.8 for NMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.
Transcribed Image Text:TABLE 4.6
MOS Transistor Parameters
NMOS DEVICE
PMOS DEVICE
Vro
+0.75 V
-0.75 V
0.75/V
0.5/V
20F
0.6 V
0.6 V
K'
100 µ.A/V2
40 μΑ/V
Eox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm
4.8. An NMOS transistor has K=200 µA/V?. What
is the value of K, if W=60 µm, L=3 µm?
If W=10 um, L=0.25 um? If W=3 µm,
%3D
%3D
L=40 nm?
%3D
![NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS
transistor.
For all regions,
W
K, = K, I
K = 4,Cx
iG =0
ig =0
(4.25)
Cutoff region:
+
G
ip = 0
for vGS < VTN
(4.26)
-OB UDS
Triode region:
UGS
VDS
ip = K, (vGS - VTN -
for vGs – VTN 2 Ups 20
UpS
(4.27)
NMOS transistor
Saturation region:
Km
(VGs - VTN) (1+ivps)
ip =
2
for vps 2 (VGS – VTN) 2 0
(4.28)
Threshold voltage:
VTN = VTo + Y (VUSB + 2¢F
VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be
20F
(4.29)
fabricated, and VTN 0 for these transistors.
PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS
transistor.
For all regions
W
(4.30)
K, = K'
L
K, = 4,C
ig = 0
ig = 0
Cutoff region:
ip = 0
for VGs 2 VTP
(4.31)
UBS
OB Ups Triode region:
ip = K, VGS-VTP-
VDS
Ups
2
for 0 < |vpsl < |VGS - VTP
(4.32)
PMOS transistor
Saturation region:
Kp
in =
(VGs - VTP) (1 + Alvosl)
for |Ups] 2 |VGS – VTP 20
(4.33)
Threshold voltage:
VTP = VTO -v (VUBS +20F - V 20F)
(4.34)
For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be
fabricated; VTp > 0 for these devices.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F1b94d5d1-8249-4b1b-8d70-6007d482e8f0%2Ff7d5815c-9811-458d-aeed-5254299ee7e2%2Fderp4w9_processed.png&w=3840&q=75)
Transcribed Image Text:NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS
transistor.
For all regions,
W
K, = K, I
K = 4,Cx
iG =0
ig =0
(4.25)
Cutoff region:
+
G
ip = 0
for vGS < VTN
(4.26)
-OB UDS
Triode region:
UGS
VDS
ip = K, (vGS - VTN -
for vGs – VTN 2 Ups 20
UpS
(4.27)
NMOS transistor
Saturation region:
Km
(VGs - VTN) (1+ivps)
ip =
2
for vps 2 (VGS – VTN) 2 0
(4.28)
Threshold voltage:
VTN = VTo + Y (VUSB + 2¢F
VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be
20F
(4.29)
fabricated, and VTN 0 for these transistors.
PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS
transistor.
For all regions
W
(4.30)
K, = K'
L
K, = 4,C
ig = 0
ig = 0
Cutoff region:
ip = 0
for VGs 2 VTP
(4.31)
UBS
OB Ups Triode region:
ip = K, VGS-VTP-
VDS
Ups
2
for 0 < |vpsl < |VGS - VTP
(4.32)
PMOS transistor
Saturation region:
Kp
in =
(VGs - VTP) (1 + Alvosl)
for |Ups] 2 |VGS – VTP 20
(4.33)
Threshold voltage:
VTP = VTO -v (VUBS +20F - V 20F)
(4.34)
For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be
fabricated; VTp > 0 for these devices.
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