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- Find the resistivity of p-type silicon with NA = 10^15/cm3 at T-300K. Assume that for intrinsic silicon un = 1350 cm2/Vs and up = 480 cm2/V.a, and for the doped silicon un = 1100 cm2/Vs and up = 350 cm2/Vs. O 17.86 Q cm 17.86 0 13.02 Q.cm 5.68 Q cm %3D 0000Question 2: а. Find the conductivity of an intrinsic semiconductor which have the following values: µe = (0 + 0.25) m²/V.s; µp = (0+ 0.035) m²/V.s; n¡ = (0 + 1.55) × 10*m³.chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) II
- The plot of the E field with respect to x in a metal semiconductor junction at 300K is shown in the figure. The semiconductor is Si and E(0)=-2x10* V/cm and xo-0.2x10 cm. What is the semiconductor type and built in potential value. レEo) O a. n type 200 mV O b. n type 800 mv Oc p type 400 mV Od. p type 200 mV O e. n type 400 mV Of. p type 800 mvA 18 V peak-to-peak sinusoidal voltage is applied across a silicon diode and series resistor. The maximum voltage across the diode is O 17.3 V O 14.3 V O 18v O 0.7 V O 9v O 10v O Other:A ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As atoms in this crystal will be: O 3.641e24 /cm^3 2.048e30 /cm^3 O 1.821e24 /cm^3 O 3.550e16 /cm^3 O 1.593e24 /cm^3
- A metal has 5.89 x 1022 conduction electron per cubic meter then its Fermi energy is (h-bar)-1.05x10-34 J.S, me =9.11 x 10 31 kg) Select one: O a. 3 *10-20 J O b. 10.26*10-20 J c. 8.84*10-19 J O d. 7*10-19 JSuppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou aoFind the values of the intrinsic carrier concentration ni for silicon at 77°C. O 5.5 x 1012 carriers/cm3 O 4.5 x 1011 carriers/cm2 O 4.15 x 1011 carriers/cm3 4.15 x 10-11 carriers/cm
- Calculate the hole velocity when a voltage of 5 V is applied through a semiconductor bar as below: V + 0.05 cm 0.55 cm (Mobility of hole is given as 450 cm²/Vs) Select one: A. 14500 cm/s B. 4090 cm/s C. 4500 cm/s D. 13180 cm/s 0.3 cmAn abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =A silicon p-n junction has energy of C.B. and V.B. are 0.9ev, 0.1ev respectively at 200°K. the hole and electron mobility, resistivity are 0.16m/v.s, 0.36 m/v.s, 0.00252.m and 0.0052.m. the electric field is 2x10v/m, m'.=0.8mo, m's=0.5m., and t= =10us, find: 1.The Built in voltage. 2. The drift currents. 3.Electron and hole diffusion length.