A simple circuit using an NMOS transistor is snown in theon as an amplifier. The input signal is vs, and the output signal isip (mA)40RDmaz =3020the output voltage for a given input voltage. The load line is a| Kirchhoff's voltage law around the drain loop. By plotting this linehe intersection of the two graphs. An example of the resulting graph10Load linePart B - Choose the drain resistorΠΠ ΑΣΦ333.35Submit Previous AnswersHilt↓↑ vec 3V GGX Incorrect; Try Again; 5 attempts remaining10RDWΩHolt15The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be VDD = 20 V. What is the largest value that can be used for RD to keep the transistor inthe saturation region?Express your answer to three significant figures.▸ View Available Hint(s)VDDUGS = 5.520UDS (V)

According to the question, for the given NMOS circuit as shown below The DC load line for the above…

The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be Vpp = 20 V. What is the largest value that can be used for Rp to keep the transistor in the saturation region?

The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be Vpp = 20 V. What is the largest value that can be used for Rp to keep the transistor in the saturation region?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

A simple circuit using an NMOS transistor is snown in the
on as an amplifier. The input signal is vs, and the output signal is
ip (mA)
40
RDmaz =
30
20
the output voltage for a given input voltage. The load line is a
| Kirchhoff's voltage law around the drain loop. By plotting this line
he intersection of the two graphs. An example of the resulting graph
10
Load line
Part B - Choose the drain resistor
ΠΠ ΑΣΦ
333.3
5
Submit Previous Answers
Hilt
↓↑ vec 3
V GG
X Incorrect; Try Again; 5 attempts remaining
10
RD
W
Ω
Holt
15
The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be VDD = 20 V. What is the largest value that can be used for RD to keep the transistor in
the saturation region?
Express your answer to three significant figures.
▸ View Available Hint(s)
VDD
UGS = 5.5
20
UDS (V)

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