The Si stepped bonding maintained at room temperature in a balanced state has a p-type doping of Na = 2*10^15/cm^3 and an n-type doping of ND = 10^15/cm^3. Next calculation.1) Draw charge density, electric field, and constant potential at approximately constant ratios as a function of the location of 1) Vbi 2)Xp, Xn, W 3)X=0 to E 4)X=0 to V 5)Draw charge density, electric field, and static potential at approximately constant rates as a function of position.

The Si stepped bonding maintained at room temperature in a balanced state has a p-type doping of Na = 2*10^15/cm^3 and an n-type doping of ND = 10^15/cm^3. Next calculation.1) Draw charge density, electric field, and constant potential at approximately constant ratios as a function of the location of 1) Vbi 2)Xp, Xn, W 3)X=0 to E 4)X=0 to V 5)Draw charge density, electric field, and static potential at approximately constant rates as a function of position.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

See similar textbooks

Similar questions

1. Given the following properties for Germanium – Diamond cubic structure (a = 0.5658 nm; Intrinsic carrier density at 300K (n; = 2.4 x 1013 cm-3) Electron mobility (He = 3900 cm²/v-s) Hole mobility (uh = 1900 cm?/v-s) %3D %3D Calculate the following - a. The ratio of the intrinsic carrier density to the atomic density b. The conductivity of intrinsic Ge at 300K
Question 1 a) Ina closed circuit, an electric current of intensity i goes through a resistor of resistance R. The electric potential at the edges of R is measured to be V. If now we write R would this generally bethe definition ofthe resistance quantity R, or the expression of Ohm's Law? Explain. b) We define the resistivity (via the familiar notation) as E p= Thus show that the resistance R can be written as, R =p- here Lis the length ofthe resistor, and A is the cross-sectional area ofit. c) Let J the curent density (i/A). Express J in tems of the electron density n (electrons/m), the electron drift velocity va, and the electron charge e. d) Show that the resistivity can be expressed (via the familiar notation) as, m p= ne't here m is the electronmass; t is the period of time that elapses between two subsequent collisions, the electron undergoes with copper nuclei throughout its chaotic motion in the body of copper (supposing that the current carrying cable is made of copper). Hint:…
A silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.
Conduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and with properties indicated below. Conductor Length Cross-Section Side Length Alpha Beta L/2 8/4 Suppose both conductors are subject to the same potential difference AV across their length while keeping their temperatures fixed. Which of the following is the correct relation between the electric currents, I, and Ig, through Aipha and Beta? O A. I = 81, %3D O B. 8I. = I3 Oc. Ia = 413 O D. 4la = I3
Re 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specify
Q2. Consider the general form of the frequency dependent relative permittivity of a medium: €,(w) = 1+ Etiw Ng², Tmeo (a) How does the above expression get modified if we assume that all the electrons have same natural frequency of oscillation? (b) Under the assumption made in part (a) and considering just one molecule per volume, plot the real and imaginary parts of €, as functions of frequency of the applied electric field. (c) Show that under certain assumption, the relative permittivity of a metal can be written as: e, (w) = (1– (d) What is the physical interpretation wp for a metal?
Consider the following doping profile in the figure below: N₁- Na N. -x0 -N a x хо Figure 1: Problem 3 Doping Profile Sketch the charge density p(x), you may assume an abrupt junction Derive an expression for the electric field
Question 1 (a) Semiconductors are materials which have a conductivity between conductors. Based on your knowledge, describe at least three particles that make up the atom and briefly describe the difference between n-type and p-type semiconductor materials. Classify the three particles that make up the atom and briefly describe the difference between n-type and p-type semiconductor materials. (b) Figure 1 shows a basic diode with p-type and n-type semiconductors with complete Voltage Bias. Identify the depletion region when the diode is conducted in reverse bias. With the aid of suitable diagram, briefly explain the region occur when the 5 V supply voltage is аpplied. p region n region VBIAS Figure 1 (c) Figure 2 shows the class of materials based on relative comparisons. Based on Figure 2 description, identify the materials that affected the conduction and valence band. As an engineer, explain the consequences if the atomic number of a neutral atom is 8, and the maximum number of…
3. a) Sketch the band diagram for intrinsic Si at T>0 K. b) Label the conduction and valence bands, and Ec, Ev, Eg- c) State the numerical value for Eg.
A. A sample of n-type germanium (Ge) contains 1023 ionised donors per cubic metre. Estimate the ratio at room temperature of the resistivity of this material to that of high purity intrinsic germanium. [given NeNh=10³8 m-6 for Ge.] B. Provide 2 examples of the application of p-n junctions, including explanation of how such junctions play an essential role.
6. In a regular FCC, determine number of atoms per unit area in (1 1 0) plane 7. In a BCC unit cell, determine number of atoms per unit area in (1 1 1) plane 8. Assuming that each Au atom donates one conduction electron, calculate the drift mobility and drift velocity of the conduction electrons in gold at 20° C if the applied electric field is 200 V/cm. What is the mean free path of the conduction electrons if their mean speed is 1.4 x 10°m s ? Resistivity of pure gold at 0°C (273 K) is po= 22.8 n2 m. a, for Au from Table 2.1 is 1/251 K'. Given that Au is FCC with lattice parameter of 0.407nm. 9. Na is a monovalent metal (BCC) with a lattice parameter of 0.43nm. The drift mobility of clectrons in Na is 53 cm V's'. Calculate the electrical conductivity of Na and the mean scattering time of conduction electrons. 10. Determ ine Miller Indices for the following: A 1/2
A simple DC circuit experiment is conducted using a circuit diagram shown below: 26 v 3 mA R R (Indiabix technologies, 2021) In the figure above, two same unknown standard resistor R is connected in the circuit . The voltmeter and ammeter are connected to the circuit as shown above. a) Calculate the unknown resistance of the resistor used in the circuit. b) If we increase the voltage to 40 V, calculate the current measured by the ammeter. | c) Using the data from the above experiment, a graph is plotted between voltage along the Y axis and current along the X axis as shown below: