The specification of BJT transistor for model of BC107/BC108/109 from Philips Semiconductors is given as in Appendix A. (a) (b) Design a BJT amplifier circuit with common-emitter fixed bias configuration that has a gain of AVL = -80. Assume ro = ∞ . For the circuit designed as in Q1(a), without affecting the operating point of the transistor, improve the circuit so that the value of AvL is doubled. Prove your suggestion via calculation.

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The specification of BJT transistor for model of BC107/BC108/109 from Philips
Semiconductors is given as in Appendix A.
(a)
(b)
Design a BJT amplifier circuit with common-emitter fixed bias configuration that has
a gain of AVL = -80. Assume r = ∞ .
For the circuit designed as in Q1(a), without affecting the operating point of the
transistor, improve the circuit so that the value of AVL is doubled. Prove your
suggestion via calculation.
Transcribed Image Text:The specification of BJT transistor for model of BC107/BC108/109 from Philips Semiconductors is given as in Appendix A. (a) (b) Design a BJT amplifier circuit with common-emitter fixed bias configuration that has a gain of AVL = -80. Assume r = ∞ . For the circuit designed as in Q1(a), without affecting the operating point of the transistor, improve the circuit so that the value of AVL is doubled. Prove your suggestion via calculation.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
Ісм
Ptot
hFE
fr
love uits
PARAMETER
collector-base voltage
for-base vol
BC107
BC108; BC109
collector-emitter
collector emitter voltage TI TEAL MALAYSIA MELAK45
open base
BC107
BC108; BC109
peak collector current
total power dissipation
DC current gain
BC107
BC108
BC109
transition frequency
CONDITIONS
open emitter
Tamb ≤ 25 °C
lc = 2 mA; VCE = 5 V
MIN. MAX.
يو سيتي
lc = 10 mA; VCE = 5 V; f = 100 MHz
110
110
200
100
50
30
20
200
300
450
800
800
UNIT
V
V
mA
mW
MHz
Transcribed Image Text:QUICK REFERENCE DATA SYMBOL VCBO VCEO Ісм Ptot hFE fr love uits PARAMETER collector-base voltage for-base vol BC107 BC108; BC109 collector-emitter collector emitter voltage TI TEAL MALAYSIA MELAK45 open base BC107 BC108; BC109 peak collector current total power dissipation DC current gain BC107 BC108 BC109 transition frequency CONDITIONS open emitter Tamb ≤ 25 °C lc = 2 mA; VCE = 5 V MIN. MAX. يو سيتي lc = 10 mA; VCE = 5 V; f = 100 MHz 110 110 200 100 50 30 20 200 300 450 800 800 UNIT V V mA mW MHz
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