What is the current in Figure 16-1(b) if the diode is made of silicon and the polarity of the source voltage is reversed? Figure 16-1 10 mA 5 mA 0.6 mA OA
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- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?Conduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and with properties indicated below. Conductor Length Cross-Section Side Length Alpha Beta L/2 8/4 Suppose both conductors are subject to the same potential difference AV across their length while keeping their temperatures fixed. Which of the following is the correct relation between the electric currents, I, and Ig, through Aipha and Beta? O A. I = 81, %3D O B. 8I. = I3 Oc. Ia = 413 O D. 4la = I3Q1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.
- A Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.Re 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specify
- The intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.For the circuit shown in the Figure , consider silicon diodes with forward drop voltage of 0.7 V. If Vs = 150 Vrms and RL = 8 KN, the average value of load current is: 1:1 Vout Vs RL Oa. 8.413 mA Ob. 10.413 mA Oc. 12.413 mA Od. 14.413 mA ellee1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
- Q6/ a- Find the conductivity and resistivity of intrinsic Ge at 300K. b- If n-type impurity is added to the extent of one atom per 10° germanium atoms, find the conductivity and resistivity. Assume the following data; n¡ = 2.5 x 1013 cm-3, Hn = 3800- cm2 V. Sec' cm2 and Number of germanium atoms/ cm3 Hp 1800: V. Sec' = 4.4 x 1022.B- From fig 3 bellow, A 19.25V, 900 mW zener diode is used for providing a 19.25V stabilized supply to a variable load. If the input voltage is 40.5V, cal- culate (i) the value of series resistance R required. (i) Diode current when the load is 910 2. (i) Zener current. R RL ZENER Vi Fig 3Q1/ Consider the depletion load transistor based at VoD-3 V, Ven=-2 V, Vtnp= 0.7 V, (W/L)D=10, such that the maximum power dissipation is 320 μW, when VI = 3 V. And Kn= 60μA/V, Determine the output voltage.