2.1. For W/L=50/0.5 and lo-500UA, compute the transconductance and output impedance of bothNMOS and PMOS; Also find the intrinsic voltage gain2.2. Derive expression for intrinsic transistor gain in terms of bias current lo and aspect ratio (W/L). If thechannel length modulation is given by i plot intrinsic gain vs drain current with channel lengthas parameter Problem #3Use the following process parametersNMOS: Tx =9.10*m,H, = 350.10 [m² /V – S],V7, =0.7V,à=0.1V,y =0.45PMOS: Tox =9.10*m,µ̟ =100.10 [m² /V – S],V7, =-0.8V,2=0.2V"',y = 0.4

Given that: (a) For NMOS: WL=500.5;ID=500 μA;TOX=9×10-9m;μn=350×10-4 m2Vsec;VTO=0.7 V;λ=0.1…

Answered: 2.1. For W/L-50/0.5 and lo-500uA,…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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In the circuit shown below. Let Vm-35 V and i-20 mA and VpQ -0.7 V: iD 3 kQ 0.8 kO Vmcos(@t)V For t Os, the current in the diode equals: Oa. 0 mA Ob. 4 mA Oc. 2 mA Od. 6 mA If t = T/4, then the current in the diode equals: Oa. 6.29 mA Ob. 5.03 mA Oc. 4,03 mA Od. 7.86 mA If t = T/2, then the current in the diode equals: Oa. 15.24 mA Ob. 13.24 mA Oc. 19.24 mA Od. 17.24 mA
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