O Assume D = Doe EKT is the diffusion coefficient of boron in silicon surface, where Do= 10.5 cm²/s and E₁ = 3.7 eV. The substrate is N-type silicon doped to 10¹15 cm³. No = 10¹5 cm² of boron is introduced just below the silicon surface. (a) What is the junction depth after a 1-h drive-in at 1,100°C? (b) By how much will the junction depth change after 106 h (~100 years) of operation at 100°C?

The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.

Problem 2 In a P-type semiconductor, the Fermi level is 0.3 eV above the valance band at a room temperature of 300 "K. Determine the new position of the Fermi level for temperatures of (a) 350 "K and (b) 400 "K. The Fermi level in a P-type material is given by

The maximum electric field in a reverse - biased semiconductor p - n junction at T - 300K is to be | Emax = 1 * 10% V / cm. the doping concentrations are Nv = 1 * 10 'cm and Nx = 2x10 cm. Determine the reverse - bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10 cm and, es - 12.9.

Sketch the transfer characteristic vo versus vi for the limiter circuit shown below. All diodes begin conducting at a forward voltage drop of 0.5V and have of 0.7V when fully conducting at 1mA.

Subject - Semi Conductor's At 300K, fermi level is found to be 0.2eV below the edge of conduction band for an n-type silicon semiconductor. Find the electron and hole concentrations. After doping again, fermi level is now founded 0.25eV below the edge of conduction band. Find the type and concentration of impurity atoms added at the later stage At 300K, Nc= 2.8x 1019 cm3

Given the relationship for semiconductor diode is : I = Io ( exp(eV/kT)-1). Proof the equation in case of PN junction.

For the circuit shown in the figure below, consider the diode as an ideal diode & R.M.S value of source voltage as Vs. The output voltage waveform at R is most likely to have zero value in the positive half cycle and a peak value of 1.414Vs in the negative half суcle sine-wave nature with a peak value 1.414VS zero value in the negative half cycle and a O peak value of 1.414Vs in the positive half сycle O sine-wave nature with a peak value Vs

When a pentavalent impurity is added to a pure semiconductor, it becomes O a. An insulator O b. p-type semiconductor O c. n-type semiconductor Od. An intrinsic semiconductor ject Jump to...

Consider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OV