In the three-dimensional view of a silicon n-channel MOS transistor shown below, 6 = 20 nm. The transistor is of width 1µm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and -12 Eo = 8.9 x 10- F/m 1μm

In the three-dimensional view of a silicon n-channel MOS transistor shown below, 6 = 20 nm. The transistor is of width 1µm. The depletion width formed at every p-n junction is 10 nm. The relative permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and -12 Eo = 8.9 x 10- F/m 1μm

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

In the three-dimensional view of a silicon n-channel MOS transistor
shown below, S = 20 nm. The transistor is of width 1μm. The
depletion width formed at every p-n junction is 10 nm. The relative
permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and
0 = 8.9 × 10-¹2 F/m
0.2μm
0.2μm
p substrate
B
G
1nm
8 S
0.2μm
1um
0.2μm
The gate- source overlap capacitance is approximately.
1um

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