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Is the undoped semiconductor's Hall constant positive, negative, or zero? Justify.
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- Semiconductor Physics /Microelectronics: Why is the voltage drop across a PN junction expressed as V = (1/e0)*x_p*N_a*q*(W/2)? Can you derive it?A semiconducting crystal 12mm long, 5mm wide and 1mm thick has a magnetic flux density of 0.5Wb/m2 applied from front to back perpendicular to largest faces. When a current of 20mA flows length wise through the specimen, the voltage measured across its width is found to be 37μV. What is the Hall coefficient of this semiconductor?:/ The only parameter that affects the conduction in semiconductors is temperature O True False Conduction is independent of temperature Other:
- Can a semiconductor be used to describe the distinction between a conductor and an insulator? Why not use a graph to support your arguments?An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cm
- Is it feasible to describe the distinction between a conductor and an insulator using a semiconductor as an example? Why not use a graph to explain your points?Is it feasible to describe the distinction between a conductor and an insulator using a semiconductor as an example? Why not use a graph to explain the arguments you're making?What semiconductor is frequently used for its high reliability at high speed? Explain why.
- Calculate the space width in (meter) and the capacitance in (Farad) for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA=1×1020/m³, Np= 1×1018, n; = 1×1015/m², &= 11.7, and the cross section area is lum. 68e-6, 2.Зе-19 О 6.8e-6, 2.3е-19 О 6.8e-6, 23e-19 O 68e-6, 23e-19 О= Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.