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It is true that one can force a polished flat end of a p type silicon to a flat end of an n type silicon to form a good p-n junction? Why?
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- An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87In an unbiased p-n junction, holes diffuse from the p-region to n-region because(a) free electrons in the n-region attract them.(b) they move across the junction by the potential difference.(c) hole concentration in p-region is more as compared to n-region.(d) All the aboveThese "holes" can move through p-type doped silicon, and effectively act as though they are charges.
- In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…In an n-type silicon, which of the following statement is true:(a) Electrons are majority carriers and trivalent atoms are the dopants.(b) Electrons are minority carriers and pentavalent atoms are the dopants.(c) Holes are minority carriers and pentavalent atoms are the dopants.(d) Holes are majority carriers and trivalent atoms are the dopants.(e) Intrinsic silicon has effective densities of states in the conduction band and the valence band of 3.2 × 10¹⁹ cm−³ and 1.8 × 10¹⁹ cm-³, respectively. If the band gap is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K? A. 9.46 x 10⁹ m-³ 9.46 x 10⁹ cm-³ 0 m-3 2.40 x 1019 cm-3 B. C. D.
- The figure shows the pn junction 250 micrometers long and made of silicon with a surface area of 100 micrometers square. In this pn junction, the I region is doped with 10 ^ 19 cm ^ -3 and in the II: region with 10 ^ 17 cm ^ -3 atoms. Only when the S1 switch is closed, the maximum is drawn from the "a-b" ends and 250 mA flows from the circuit. The ability of electrons to move in the pn junction is 1200 cm ^ 2 / V.s, and the ability of the holes to move is 400 cm ^ 2 / V.s. What is the channel width accordingly? (W =?)When p-type and n-type silicon wafers touch, at the junction conduction electrons from the n-type move into the "holes" in the p-type. This area when region. there are no longer conduction electrons or holes is called the= Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10
- When a photon enters the depletion zone of a p-n junction, the photon can scatter from the valence electrons there, transferring part of its energy to each electron, which then jumps to the conduction band. Thus, the photon creates electron–hole pairs. For this reason, the junctions are often used as light detectors, especially in the x-ray and gamma-ray regions of the electromagnetic spectrum. Suppose a single 662 keV gamma-ray photon transfers its energy to electrons in multiple scattering events inside a semiconductor with an energy gap of 1.1 eV, until all the energy is transferred. Assuming that each electron jumps the gap from the top of the valence band to the bottom of the conduction band, find the number of electron – hole pairs created by the process.Pure silicon at room temperature has an electron number density in the conduction band of about 5 * 105 m-3 and an equal density of holes in the valence band. Suppose that one of every 107 silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).