Question3: A uniform piece of n-type of silicon that is 1um long senses a voltage of 1 V. Determine the velocity of the electrons. Use u-1350 cm?/V.sec Question4: A pn junction is biased with a reverse voltage (VR) and is doped with NA = 2x1016 /cm and Np-9x1015 /cm Determine the capacitance of the device with (a) VR=0v; (b) VR=lv. Use ɛ, = 11.7 Eg, Eo=8.854x10-14 F/cm, q=1.6x10-19c, n-1.5x1010 /cm, m31/2, Vr-25.8mV, Cross-section area = 10 cm?.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Question3: A uniform piece of n-type of silicon that is 1um long senses a voltage of 1 V.
Determine the velocity of the electrons. Use u=1350 cm?/V.sec
Question4: A pn junction is biased with a reverse voltage (VR) and is doped with NA 2x1016
/cm and Np-9x1015 /cm Determine the capacitance of the device with (a) VR=0v; (b) VR=lv.
Use e, = 11.7 E, E-8.854x10-14 F/cm, q=1.6x10-1c, n-1.5x1010 /cm, m-1/2, Vr-25.8mV,
Cross-section area = 10 cm2.
English (United States)
O Focus
Transcribed Image Text:Question3: A uniform piece of n-type of silicon that is 1um long senses a voltage of 1 V. Determine the velocity of the electrons. Use u=1350 cm?/V.sec Question4: A pn junction is biased with a reverse voltage (VR) and is doped with NA 2x1016 /cm and Np-9x1015 /cm Determine the capacitance of the device with (a) VR=0v; (b) VR=lv. Use e, = 11.7 E, E-8.854x10-14 F/cm, q=1.6x10-1c, n-1.5x1010 /cm, m-1/2, Vr-25.8mV, Cross-section area = 10 cm2. English (United States) O Focus
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