The two semiconductor materials have exactly the same properties, except that material A has a band gap of 1.0 eV and material B has a band gap energy of 1.2 eV. What is the ratio of the prime concentration of material A to that of material B? a) 47.5 b) 58.23 c) 1048 d) 2016

The two semiconductor materials have exactly the same properties, except that material A has a band gap of 1.0 eV and material B has a band gap energy of 1.2 eV. What is the ratio of the prime concentration of material A to that of material B? a) 47.5 b) 58.23 c) 1048 d) 2016

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Related questions

Q: 8. A pure silicon contains 5 x 1028 atom per cubic meter and the ratio of broken bonds are one bond…

A: Silicon is a semiconductor metal, which has normally 4 valence electrons. The bond-breaking refers…

Q: Density of state of copper The Density of state for copper 8.9 gm/cm^3 Q1)Find and explain: a-The…

A: Since there are multiple questions uploaded so solving the relevant questions accordingly and Kindly…

Q: In which of the following, the number of electrons in the conduction band and the number of holes in…

A: In intrinsic semiconductor the number of electrons and holes are equal.

Q: 1-If you know that the Fermi level is below the conduction band by 0.25eV and that the energy gap of…

Q: (a) Determine the position of the Fermi energy level with respect to the intrinsic Fermi level ir…

A: To find the position of the Fermi levels and concentration of No and Po

Q: 1. The following data is available for an undoped semiconductor: n; = 1010 /cc, T = 300 K, N. = 3 x…

A: According to the question, for an intrinsic semiconductor ηi=1010 cm-3T=300 K0;Nc=3×1019…

Q: Question Two The hole concentration in silicon varies linearly from x = 0 to x = 0.01 cm. The hole…

Q: The graph below illustrates the effect of temperature on the conductivity of an extrinsic…

A: 1) semiconductor should be operated in region 2 because for a temperature range it should not vary…

Q: The hole concentration in silicon varies linearly from x = 0 to x = 0.01 cm. The hole diffusion…

A: This question is from "Advance Analog Electronics". Under which we are going to study the…

Q: 10. The is a two-terminal semiconductor device whose terminal resistance will vary ...........…

A: ANS 10 photoconductive cell The photoconductive cell is a two terminal semiconductor device whose…

Q: The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for…

A: We know, Nc=4.82×1015 mnm32 T32 /cm3Nc∝T32 Nc 300KNc 400K=30040032Nc 400K=4332 ×2.8×1019 cm-3Nc…

Q: Q6: Determine the probability f (E) for electrons occupied in conduction band at 300°K, considering…

Q: At the temperature (300° k) we find that (n and (n = 2.5 x 1019) e/m³ in germanium and the energy…

Q: For a particular semiconductor sample, hole concentration po = 1013e¬*/Lr cm³ for x 2 0, Lp = 2 ×…

A: We know formula for current density .

Q: At T=300K, the electron concentration of a semiconductor material is n, =10° cm³. The bandgap energy…

Q: A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K…

A: The boron concentration in Si wafer is: (1). At temperature T = 0 K, the Si wafer acts as an…

Q: how much is the nominal current with which a LED diode with semiconductor material (wavelength) LED…

A: (LED)light emitting diode is an electric component which emits light if the electric current flows…

Q: Silicon is doped with 1016 boron atoms/cm3. How many boron atoms will be in a silicon region that is…

A: Considering the silicon is doped with the 1016 boron atoms/cm3. The number of the atoms can be…

Q: A silicon wafer (n;=1.388×10'6 atoms / m³) is doped with 4.50 × 10" boron atoms/m at 27°c. The…

Q: 5. Consider the energy diagrams for Si, Ge, and GaAs shown below (also in Slide 14 in Lecture 2.3…

A: Calculation of wavelengths for given energy diagrams of Si, Ge and GaAs : Enegy bandgap of Ge,…

Q: Which of the following has the maximum Energy gap between conduction band and valence band? O None O…

A: The bandgap is the energy gap between the valence band and conduction band or between the free state…

Q: Q1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivity of 60…

A: We need to find out resistivity at given temperature

Q: Given a Si sample of unknown doping, Hall measurement has been made and the following information…

A: W = 0.05 cm, A = 1.6 x 10-3 cm2 I = 2.5 mA, and the magnetic field is 30 nT (1T = 104 Wb/cm2 Hall…

Q: Question 4 If a pure ("intrìnsic") semiconductor material is heated, the thermal energy liberates…

A: In pure intrinsic semiconductor, the concentration of electrons is equals to concentration of holes.…

Q: 1. The following data is available for an undoped semiconductor: n, 1010 /cc, T= 300 K, N. = 3 x 10"…

Q: (d) Explain how the Fermi energy level changes with doping concentration. Support your answer by…

Q: 1.Silicon is a single-crystal material with no other type of atoms within the material. Given the…

A: Silicon is a single-crystal material with no other type of atoms within the material. Given the…

Q: The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density…

A: Given data, The value of maximum drift velocity is 107 cm/s. The value charge density is 0.4 C/cm3.…

Q: 8. A pure silicon contains 5 x 1028 atom per cubic meter and the ratio of broken bonds are one bond…

A: Given: Si=5×1028 atoms /m3 one bond / 1012 atoms Eg=1.1eV New temperature =75°C

Q: Given a Si sample of unknown doping, Hall measurement has been made and the following information…

A: Given a Si sample of unknown doping, Hall measurement has been made and the following information…

Q: Semiconductors having band gap near 1.5 eV are preferred for solar cells because, select the best…

A: High band gap cells in the range of 1.5 eV absorb more number of photons from sun radiation as…

Q: 27 - Which of the following is obtained when atoms with 3 electrons in the final orbit are added to…

A: Pure semi conductor has four electrons in the final orbit. when a atom with three electrons in its…

Q: Draw the energy band diagrams, showing Ec, Ev, EF, and Et, for the following; assum ing all…

Q: semiconductor is transparent to light with a wavelength longer than 0.87 μm, determine its band gap…

Q: The thermal equilibrum concentration of the electron at T=300K in silicon is n0=5*10^4cc. What is…

A: The solution can be achieved as follows.

Q: Interpret the different transitions in the absorption process occurring 6 between bands in…

Q: QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K…

A: as per our company guidelines we are supposed to answer only first one question. Kindly repost other…

Q: Consider a material where the probability of a hole occupying a state in the middle of the valence…

Q: Q1: Circle the correct answer Silicon has an electron affinity of 4.05 eV and a bandgap of 1.12 eV.…

Q: Consider a silicon crystal at 27° C doped with atoms at a concentration of Na = 10" cm 1- Calculate…

A: Here this is n type si semiconductor. I have found the value of conductivity and the difference of…

Q: Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3…

A: Given: since silicon is doped with boron i.e Trivalent impurity. Therefore it is a P-Type…

Q: (ii) The magnitude of the electronic bandgap in a solid is primarily determined by The temperature…

A: Semiconductor are the material made of pure Si or Ge or compound . They have conductivity in between…

Q: 3.3 For a silicon crystal doped with boron, what must N be if at T 300 K the electron concentration…

A: The solution can be achieved as follows.

Q: 1. a) A semiconductor sample of Si at 300 K, of width 0.01 cm, length 0.1 cm and thickness 0.001 cm,…

A: "According to the Company's policy, we will provide solution of the first three parts of the…

Q: A silicon (100) wafer with an initial oxide thickness of do is oxidized in a furnace at 1100 C with…

A: First to determine a wet oxidation at 1100oC (That is, 1373 K).

Q: In a certain semiconductor, the Fermi energy lies above the top of the valence band by an amount…

A: Given, In a certain semiconductor, the Fermi energy lies above the top of the valence band by an…

Q: In a semiconductor, an energy gap concept is used to show the difference between …… .. Please choose…

A: Eg = Energy gap . Eg = EC -EV EC = conduction energy band level EV = valence energy band…

Q: Two semiconductor material have exactly the same properties except that material A has a bandgap of…

A: For a semicounductor at a tempeture of T K, the intrinsic carrier concentration can be expressed as…

Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

İNGİLİZCE
TÜRKÇE
RUSÇA
The two semiconductor materials have exactly the same
properties, except that material A has a band gap of 1.0 eV and
material B has a band gap energy of 1.2 eV. What is the ratio of the
prime concentration of material A to that of material B?
a) 47.5
b) 58.23
c) 1048
d) 2016
Bu bilgi faydalı mıydı?
Evet
Hayır
2021/2/11 16:32

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Types of Semiconductor Material and Its Energy Band Analysis

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

What is CEMF?
The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.
Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
Consider an p-type silicon for which the dopant concentration Np = 1018/em3. Find the electron and hole %3! concentrations at T 350 K. electron = 1018 cm3, & holes= 2.25 x 102/cm3 ст electron = 2.25 x 102/cm3 & holes= 2.25 x 104/cm3 104 /em3 electron = 1018/cm3 & holes= 10o18 cm3 electron = 17.22 x & holes= 1018 cm3 %3D
At 300 K temperature, for a Si diode, the forward current is found to be 1 mA. If the forward voltage is 0.7 V, then estimate the reverse saturation current.
Q.2 Te diodes m the Cir Cuit of 6iG. below are icdead , Drow the Tran sfer characteristic for 2ovSVi s 2ov ? Di Ri R3 lov
Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?
b.2 Determine Vo, Ip, and IR. Draw the equivalent circuit using approximate models of the diodes. Si IR +12 Vo Vo red Typical Forward Voltage (V) ID Color Construction Note: A diode which emits 680 2 light when forward-biased is known 2.1 AllnGaP GaN GaP Amber 5.0 as ight-emitting Bluc diodes (LED). LEDS have different colors and each Green 2.2 Orange GaAsP 2.0 Red GAASP 1.8 color has equivalent knee voltage. White GaN 4.1 Yellow AllnGaP 2.1
In silicon at 300K, two-third oithe total quantum stales betveen Ey -KT and Eyare erpty frm electron. Find electron and hole concentration at 300k. Consider m'p=0.56m,.1M=9,11x10 31 kg. h = 6.63 x10-3 m7kg/s.
Considering the following expressions for pure germenium and pure silicon: 1. direct band gap semiconductors 2. indirect band gap semiconductors 3. degenerate semiconductors from these expressions: please choose one: a) 1 alone is true b) 2 alone is true c) 3 alone is true d) none of the above
Q1) Multiple Choice: Choose the answer that you would see as the best correct description of the statement. You should then explain why you chose this answer. (Hint: "Because it is the best answer" will not be sufficient). (i) Semiconductors are useful as electronic devices because They are very abundant in nature They are all good conductors They have a very high melting point Their electrical conductivity can be controlled by the addition of impurities Their electrical conductivity can be controlled by a variation in the temperature Explain why you chose this answer: (ii) The magnitude of the electronic bandgap in a solid is primarily determined by The temperature The number of free electrons in the material The nature and strength of the chemical bond in the material The type of doping in the material Will decrease when we apply a positive voltage Explain why you chose this answer: (1) (2) (1) (2)
Find the kinetic energy of electrons in the conduction band of a nondegenerate n-type semiconductor at 300 K.