Introduction To Quantum Mechanics
Introduction To Quantum Mechanics
3rd Edition
ISBN: 9781107189638
Author: Griffiths, David J., Schroeter, Darrell F.
Publisher: Cambridge University Press
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Chapter 9.2, Problem 9.5P
To determine

The expression for the tunneling probability in terms of Eg and E0.

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a) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)
An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.
Consider the topic light-matter interaction. (a) Explain the concepts of absorption and (b) emission (spontaneous and stimulated) of a photon by a semiconductor by using the energy-band diagrams. (c) Give examples of devices working with these principles.
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