Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Concept explainers
Textbook Question
Chapter 1, Problem 1.6P
Silicon is doped with
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Draw band diagrams for below contacts.
b) metal-n-type semiconductor for Φm> Φs
In the circuit a current of no more tha 20 mA may flow for a maximum instataneous voltage of 20 v.In the conducting state direction the voltage drop across each diode is at least 1.5 v.
How large must the protective resistor be?calculate using ohms law.
Question 3: If we assume the reverse current is -99 pA, the built-in voltage is 0.64 V,
and the applied voltage Va is -26 V, what reverse R-G current in pA would we expect if
the applied voltage Va is changed to -1 V. This is for an abrupt junction silicon diode at
room temperature. Answer should be to three significant digits with fixed point notation.
Correct Answer: -24.6
Chapter 1 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...
Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- How many valence electrons are generally contained in materials used for insulators?arrow_forward1 (b) When Ef touches intrinsic Fermi energy Eri, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case?arrow_forward-3 A sample of silicon is doped n-type to a value 223300443149266120000000 m If the electron mobility is 0.12 m²v-1-1, calculate the conductivity in the sample in 2-1m-1 (give your answer as an integer number)arrow_forward
- In the figure given we have u(t)=10. cosot [V]. We assume the diodes and the A-meter (A) to be ideal. A u(t) a) Plot the waveform of the current flowing through the A-m in scale. b) What is the reading of the A-m, if it is moving-coil type? c) What is the reading of the A-m, if it is moving-iron type? d) Calculate the power factor of the WHOLE structure. R1 1 R2 102arrow_forwardQUESTION 3. In the reverse-bias region the saturation current of a silicon diode is about 0.1 μA (T = 20°C). Determine its approximate value if the temperature is increased 40°C.arrow_forwardSilicon is doped with 6 × 1017 boron atoms/cm3 and 2×1017 phosphorusatoms/cm3 (a)Is this n-or p-type silicon? (b) What are the hole and electron concentrations at room temperature?arrow_forward
- 1. For the following circuit with an ideal diode, determine at what time the diode starts conducting (goes into the "ON" state). Assume that the resistor is R= 15002, the battery has a constant voltage of B = 10V, and the varying source is Vs = 2t – 1 volts. Enter the value of time (in seconds) without the units. R Vs BVarrow_forwardA Germanium diode displays a forward voltage of 0.25V at 10mA current at room temperature. Find the reverse saturation current. Given : = 0.25V ID 10 mA Te = 27°C TK = (273 + 27) k TK = 300 'K Is = ?arrow_forward7. A diode conducts 1mA at 20°C. If it is operated at 100°C, what will be the current? Given data: n=1.74 and NTC value = 2.2mV/°C.arrow_forward
- Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?arrow_forward1-In the circuit designed to measure the effective value of the sinusoidal voltage at the input, diodes are considered ideal. M deflection is a measuring element with rotating coil. Rm=2k İm=(10)^-4 A. A- Draw the waveform of the current flowing through M on a scale. Determine the resistance value of R1 so that the nominal voltage value of V-m is 100V. B-What should the tolerances of the resistors be so that the Vm class is at most 1.5? (resistors have the same tolerances). R1 u(t) R2 1R3 18k 20k R4 k: k2 10karrow_forwardQ: - Consider the circuit in Figure a) What type of circuit is this? b) Find and Sketch the voltage waveform across RL, assume the diodes are practical. 4:1 D, 120 V rms c) If sin wave with 100µf connected in parallel with the resistor, calculate the ripple сарacitor is 60 HZ 1.0 kN D2 factor lllee lelllarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Electricity for Refrigeration, Heating, and Air C...Mechanical EngineeringISBN:9781337399128Author:Russell E. SmithPublisher:Cengage LearningDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Electricity for Refrigeration, Heating, and Air C...
Mechanical Engineering
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Cengage Learning
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Conductivity and Semiconductors; Author: Professor Dave Explains;https://www.youtube.com/watch?v=5zz6LlDVRl0;License: Standard Youtube License