The number of electrons excited in an element of band gap 2.12 eV is 2.09x106.Calculate the frequency of the photon that is required to excite the electrons from conduction band to valence band. (a) 1.07x102 Hz (b) 10.7x102 Hz (c) 9.31x102 Hz (d) 7.08x102 Hz X
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- Problem 5. Assume that at T=300 K, the electron mobility in a silicon sample is 1300 cm²/Vs. If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m₂* v² where Va is the drift velocity.)The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a gamma-ray photon with wavelength 9.31 * 10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray?Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?
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