Find the values of n, per cubic centimeter for silicon [E=1.12 eV] at T= 300 energy is 0.22 eV above the valence band energy [ Nc=2.8x1018 cm³].
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![Find the values of no per cubic centimeter for silicon [E=1.12 eV] at T= 300 K, if the Fermi
energy is 0.22 eV above the valence band energy [ Nc=2.8x1018 cm³] .
5.13x 10^15
2.3x10^3
2.27x 10^3
5.13x10^3](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fa200207a-b991-483d-956e-f1a9a9a1c1ad%2Fee6e9253-f84e-48f8-b595-0bda9d6fb547%2Fzbxuvd8_processed.jpeg&w=3840&q=75)
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- The measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?The conductivity of an intrinsic silicon sample is found to be 1.02 m.S.m-1 at 297.2 K and 2.15 mS.m-1 at 307.9 K. What is the bandgap energy in silicon? (Boltzmann constant: 1.38064852 * 10-23 m². kg. s-². K−¹) Answer:constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.
- Find the resistivity of p-type silicon with NA = 10^15/cm3 at T-300K. Assume that for intrinsic silicon un = 1350 cm2/Vs and up = 480 cm2/V.a, and for the doped silicon un = 1100 cm2/Vs and up = 350 cm2/Vs. O 17.86 Q cm 17.86 0 13.02 Q.cm 5.68 Q cm %3D 0000What is the hole diffusion constant (cm2/s) in a piece of silicon doped with 3x1015cm-3 of donors and 7x1015cm-3 of acceptors at 350K and with mobility 310 cm2/V.s? 9.4 O 10 O 7.4 O 11.4The general expression for the Fermi energy of a metal at OK is 3.65X10-19x n2/3ev more 3.65X1019Xn?eV O 3.65X1019Xn2/3eV 3.65X1019Xn1/3eV
- An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =Physics . Determine the number of conduction electrons/m3 in pure silicon AND silicon’s conductivity σfora) T = 10 Kb) T = 100 Kc) T = 1000 Kd) Conceptually, why does Si’s conductivity get better with increasing temperature?(For intrinsic Si, me* = 1.08me, μe = 1400cm2/V∙s, mh* = 0.60me, μh = 450cm2/V∙s, at. wt. = 28.085g/mol, density = 2.329 g/cm3).A metal has 5.89 x 1022 conduction electron per cubic meter then its Fermi energy is (h-bar)-1.05x10-34 J.S, me =9.11 x 10 31 kg) Select one: O a. 3 *10-20 J O b. 10.26*10-20 J c. 8.84*10-19 J O d. 7*10-19 J
- Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) IISilicon is doped with 3×1018 arsenic atoms/cm3 and 8 × 1018 boron atoms/cm3. (a) Is this n- or p-type silicon? (b) What are the hole and electron concentrations at room temperature?
